Title :

A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum

Author(s) :

Passi, Vikram [Auteur]
Dispositifs Intégrés et Circuits Electroniques Machine Learning Group [DICE - MLG]
Lecestre, Aurélie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Krzeminski, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Larrieu, Guilhem [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Raskin, Jean-Pierre [Auteur]
Dispositifs Intégrés et Circuits Electroniques Machine Learning Group [DICE - MLG]

Journal title :

MICROELECTRONIC ENGINEERING

Pages :

1872-1878

Publisher :

Elsevier

Publication date :

2009-11-10

ISSN :

0167-9317

Keyword(s) :

Electron beam lithography
Hydrogen silsesquioxane (HSQ)
Lift-off technique
Platinum deposition
Germanium deposition
Tetramethylammonium hydroxide (TMAH)

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative ...
Show more >Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric acid. Ultrasonic agitation is also used to reduce the formation of flakes due to accumulation of matter (evaporated metal in our case) along the sidewalls of the lift-off narrow slots. Results demonstrate potential in applying the hydrogen silsesquioxane as a negative tone lift-off resist to pattern nanometer scale features into germanium and platinum layers.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL