A single layer hydrogen silsesquioxane ...
Document type :
Article dans une revue scientifique
Title :
A single layer hydrogen silsesquioxane (HSQ) based lift-off process for germanium and platinum
Author(s) :
Passi, Vikram [Auteur]
Dispositifs Intégrés et Circuits Electroniques Machine Learning Group [DICE - MLG]
Lecestre, Aurélie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Krzeminski, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Larrieu, Guilhem [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Raskin, Jean-Pierre [Auteur]
Dispositifs Intégrés et Circuits Electroniques Machine Learning Group [DICE - MLG]
Dispositifs Intégrés et Circuits Electroniques Machine Learning Group [DICE - MLG]
Lecestre, Aurélie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Krzeminski, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Larrieu, Guilhem [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Raskin, Jean-Pierre [Auteur]
Dispositifs Intégrés et Circuits Electroniques Machine Learning Group [DICE - MLG]
Journal title :
MICROELECTRONIC ENGINEERING
Pages :
1872-1878
Publisher :
Elsevier
Publication date :
2009-11-10
ISSN :
0167-9317
Keyword(s) :
Electron beam lithography
Hydrogen silsesquioxane (HSQ)
Lift-off technique
Platinum deposition
Germanium deposition
Tetramethylammonium hydroxide (TMAH)
Hydrogen silsesquioxane (HSQ)
Lift-off technique
Platinum deposition
Germanium deposition
Tetramethylammonium hydroxide (TMAH)
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative ...
Show more >Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric acid. Ultrasonic agitation is also used to reduce the formation of flakes due to accumulation of matter (evaporated metal in our case) along the sidewalls of the lift-off narrow slots. Results demonstrate potential in applying the hydrogen silsesquioxane as a negative tone lift-off resist to pattern nanometer scale features into germanium and platinum layers.Show less >
Show more >Primarily used as etch mask, single layer hydrogen silsesquioxane has never been investigated for lift-off technique. In this article, we propose a new technique where a single layer of hydrogen silsesquioxane, a negative tone electron beam resist, is used to make lift-off of germanium and platinum. Removal of exposed hydrogen silsesquioxane is tested for various concentrations of hydrofluoric acid. Ultrasonic agitation is also used to reduce the formation of flakes due to accumulation of matter (evaporated metal in our case) along the sidewalls of the lift-off narrow slots. Results demonstrate potential in applying the hydrogen silsesquioxane as a negative tone lift-off resist to pattern nanometer scale features into germanium and platinum layers.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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