Title :

Recent Progress in Dilute Nitride-antimonide Materials for Photonic and Electronic Applications

Author(s) :

Yoon, Sonn Fatt [Auteur]
School of Electrical and Electronic Engineering [EEE]
Tan, Kian Hua [Auteur]
School of Electrical and Electronic Engineering [EEE]
Loke, Wan Khai [Auteur]
School of Electrical and Electronic Engineering [EEE]
Wicaksono, Satrio [Auteur]
School of Electrical and Electronic Engineering [EEE]
Lew, Kim Luong [Auteur]
School of Electrical and Electronic Engineering [EEE]
Ng, Tien Khee [Auteur]
School of Electrical and Electronic Engineering [EEE]
Xu, Zhe [Auteur]
School of Electrical and Electronic Engineering [EEE]
Sim, Y. K. [Auteur]
School of Electrical and Electronic Engineering [EEE]
Stöhr, Andreas [Auteur]
Universität Duisburg-Essen = University of Duisburg-Essen [Essen]
Fedderwitz, Sascha [Auteur]
Universität Duisburg-Essen = University of Duisburg-Essen [Essen]
Weiss, Mario [Auteur]
Universität Duisburg-Essen = University of Duisburg-Essen [Essen]
Ecin, Okan [Auteur]
Universität Duisburg-Essen = University of Duisburg-Essen [Essen]
Poloczek, Arthur [Auteur]
Universität Duisburg-Essen = University of Duisburg-Essen [Essen]
Malcoci, Andrei [Auteur]
Universität Duisburg-Essen = University of Duisburg-Essen [Essen]
Jäger, Dieter [Auteur]
Universität Duisburg-Essen = University of Duisburg-Essen [Essen]
Saadsaoud, Naïma [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dogheche, El Hadj [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Tripon-Canseliet, Charlotte [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Faci, Salim [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Chazelas, Jean [Auteur]
THALES Airborne Systems [Elancourt]
Gupta, James A. [Auteur]
Institute for Microstructural Sciences [NRC - IMS]
Mcalister, Sean P. [Auteur]
Institute for Microstructural Sciences [NRC - IMS]

Conference title :

215th ECS Meeting

City :

San francisco

Country :

Etats-Unis d'Amérique

Start date of the conference :

2009-05-24

Publication date :

2009-09-21

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. ...
Show more >This paper reviews the recent progress in GaNAsSb material for photonic and electronic applications. All the results and data presented in this review article are summarized from our previously published works in refs. 6-12. Photoresponsivity of 12A/W and cut-off frequency of 4.5GHz were achieved in the 1.3µm GaNAsSb based photodetector. A GaNAsSb/GaAs optical waveguide system was also demonstrated at 1.55µm. The GaNAsSb based photoconductive switch exhibits pulsed response with FWHM of 30ps and photoresponse of up to 1.6µm. The turn-on voltage of the device fabricated from GaNAsSb based HBT is ~330mV lower than that of a conventional AlGaAs/GaAs HBT.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL