1.55-µm GaNAsSb-based photoconductive ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
1.55-µm GaNAsSb-based photoconductive switch for microwave switching
Auteur(s) :
Tan, Kian Hua [Auteur]
School of Electrical and Electronic Engineering [EEE]
Tripon-Canseliet, Charlotte [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Faci, Salim [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Pagies, Antoine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Loke, Wan Khai [Auteur]
School of Electrical and Electronic Engineering [EEE]
Wicaksono, Satrio [Auteur]
School of Electrical and Electronic Engineering [EEE]
Yoon, Sonn Fatt [Auteur]
School of Electrical and Electronic Engineering [EEE]
Magnin, Vincent [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
THALES Airborne Systems [Elancourt]
School of Electrical and Electronic Engineering [EEE]
Tripon-Canseliet, Charlotte [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Faci, Salim [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Pagies, Antoine [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Loke, Wan Khai [Auteur]
School of Electrical and Electronic Engineering [EEE]
Wicaksono, Satrio [Auteur]
School of Electrical and Electronic Engineering [EEE]
Yoon, Sonn Fatt [Auteur]
School of Electrical and Electronic Engineering [EEE]
Magnin, Vincent [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
THALES Airborne Systems [Elancourt]
Titre de la revue :
IEEE Photonics Technology Letters
Pagination :
1105-1107
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2010-09-06
ISSN :
1041-1135
Mot(s)-clé(s) en anglais :
gallium compounds
arsenic compounds
III-V semiconductors
molecular beam epitaxial growth
microwave switches
nitrogen compounds
photoconducting switches
arsenic compounds
III-V semiconductors
molecular beam epitaxial growth
microwave switches
nitrogen compounds
photoconducting switches
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Electromagnétisme
Résumé en anglais : [en]
We report a GaNAsSb-based photoconductive switch for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a radio-frequency plasma-assisted nitrogen source and a valved ...
Lire la suite >We report a GaNAsSb-based photoconductive switch for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a radio-frequency plasma-assisted nitrogen source and a valved antimony cracker cell. The switch shows a maximum ON-OFF ratio of 9 dB at 1.5 GHz under 1.55-m laser excitation at 80 mW. The switch also shows a positive ON-OFF ratio up to 10 GHz. This is the first successful demonstration of a photoconductive switch for microwave switching application under 1.55- m wavelength excitation. Further analysis suggests that the high contact resistance may degrade the performance of the photoconductive switch.Lire moins >
Lire la suite >We report a GaNAsSb-based photoconductive switch for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a radio-frequency plasma-assisted nitrogen source and a valved antimony cracker cell. The switch shows a maximum ON-OFF ratio of 9 dB at 1.5 GHz under 1.55-m laser excitation at 80 mW. The switch also shows a positive ON-OFF ratio up to 10 GHz. This is the first successful demonstration of a photoconductive switch for microwave switching application under 1.55- m wavelength excitation. Further analysis suggests that the high contact resistance may degrade the performance of the photoconductive switch.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :