GaNAsSb material for ultrafast microwave ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
GaNAsSb material for ultrafast microwave photoconductive switching application
Auteur(s) :
Tan, Kian Hua [Auteur]
School of Electrical and Electronic Engineering [EEE]
Yoon, Sonn Fatt [Auteur]
School of Electrical and Electronic Engineering [EEE]
Tripon-Canseliet, Charlotte [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Loke, Wan Khai [Auteur]
School of Electrical and Electronic Engineering [EEE]
Wicaksono, Satrio [Auteur]
School of Electrical and Electronic Engineering [EEE]
Faci, Salim [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Saadsaoud, Naïma [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
THALES Airborne Systems [Elancourt]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
THALES Airborne Systems [Elancourt]
School of Electrical and Electronic Engineering [EEE]
Yoon, Sonn Fatt [Auteur]
School of Electrical and Electronic Engineering [EEE]
Tripon-Canseliet, Charlotte [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Loke, Wan Khai [Auteur]
School of Electrical and Electronic Engineering [EEE]
Wicaksono, Satrio [Auteur]
School of Electrical and Electronic Engineering [EEE]
Faci, Salim [Auteur]
Laboratoire d'Electronique et Electromagnétisme [L2E]
Saadsaoud, Naïma [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
THALES Airborne Systems [Elancourt]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
THALES Airborne Systems [Elancourt]
Titre de la revue :
Applied Physics Letters
Pagination :
063509
Éditeur :
American Institute of Physics
Date de publication :
2008-08-25
ISSN :
0003-6951
Mot(s)-clé(s) en anglais :
photoconducting switches
nitrogen compounds
arsenic compounds
gallium compounds
III-V semiconductors
nitrogen compounds
arsenic compounds
gallium compounds
III-V semiconductors
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Electromagnétisme
Sciences de l'ingénieur [physics]/Electronique
Sciences de l'ingénieur [physics]/Electronique
Résumé en anglais : [en]
We report a photoconductive switch with GaNAsSb as active material for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source and a ...
Lire la suite >We report a photoconductive switch with GaNAsSb as active material for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source and a valved antimony cracker source. The 0.5 μm thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb. The switch exhibits pulsed response with full width at half maximum of 30 ps and photoresponse of up to 1.6 μm. In microwave switching application, the switch shows ON/OFF ratio of 11 dB at 1 GHz and response up to 15 GHz.Lire moins >
Lire la suite >We report a photoconductive switch with GaNAsSb as active material for microwave switching application. The GaNAsSb layer was grown by molecular beam epitaxy in conjunction with a rf plasma-assisted nitrogen source and a valved antimony cracker source. The 0.5 μm thick GaNAsSb photoabsorption layer contains 3.5% of N and 9% of Sb. The switch exhibits pulsed response with full width at half maximum of 30 ps and photoresponse of up to 1.6 μm. In microwave switching application, the switch shows ON/OFF ratio of 11 dB at 1 GHz and response up to 15 GHz.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :