Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

Xu, T.; Sulerzycki, J.; Nys, J.P.; Patriarche, G.; Grandidier, B.; Stievenard, D.

Document type :

Article dans une revue scientifique

DOI :

10.1186/1556-276X-6-113

Title :

Synthesis of long group IV semiconductor nanowires by molecular beam epitaxy

Author(s) :

Xu, T. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Sulerzycki, J. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Nys, J.P. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Patriarche, G. [Auteur]
Laboratoire de photonique et de nanostructures [LPN]
Grandidier, B. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Stievenard, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Nanoscale Research Letters

Pages :

113-1-7

Publisher :

SpringerOpen

Publication date :

2011

ISSN :

1931-7573

English keyword(s) :

Molecular Beam Epitaxy
Seed Particle
Sidewall Roughness
Length Growth Rate
Gold Droplet

HAL domain(s) :

Physique [physics]

English abstract : [en]

We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of ...
Show more >We report the growth of Si and Ge nanowires (NWs) on a Si(111) surface by molecular beam epitaxy. While Si NWs grow perpendicular to the surface, two types of growth axes are found for the Ge NWs. Structural studies of both types of NWs performed with electron microscopies reveal a marked difference between the roughnesses of their respective sidewalls. As the investigation of their length dependence on their diameter indicates that the growth of the NWs predominantly proceeds through the diffusion of adatoms from the substrate up along the sidewalls, difference in the sidewall roughness qualitatively explains the length variation measured between both types of NWs. The formation of atomically flat {111} sidewalls on the <110>-oriented Ge NWs accounts for a larger diffusion length.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :