Deep structural analysis of novel BGaN ...
Document type :
Article dans une revue scientifique
Title :
Deep structural analysis of novel BGaN material layers grown by MOVPE
Author(s) :
Gautier, S. [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Patriarche, G. [Auteur]
Moudakir, T. [Auteur]
SUPELEC-Campus Metz
Abid, M. [Auteur]
Georgia Tech Lorraine [Metz]
Orsal, G. [Auteur]
Georgia Tech Lorraine [Metz]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Pantzas, K. [Auteur]
Georgia Tech Lorraine [Metz]
Troadec, david [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, A. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Largeau, L. [Auteur]
Mauguin, O. [Auteur]
Ougazzaden, A. [Auteur]
Georgia Tech Lorraine [Metz]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Patriarche, G. [Auteur]
Moudakir, T. [Auteur]
SUPELEC-Campus Metz
Abid, M. [Auteur]
Georgia Tech Lorraine [Metz]
Orsal, G. [Auteur]
Georgia Tech Lorraine [Metz]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
Pantzas, K. [Auteur]
Georgia Tech Lorraine [Metz]
Troadec, david [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, A. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Largeau, L. [Auteur]
Mauguin, O. [Auteur]
Ougazzaden, A. [Auteur]
Georgia Tech Lorraine [Metz]
Journal title :
JOURNAL OF CRYSTAL GROWTH
Pages :
288-291
Publisher :
Elsevier
Publication date :
2011-01-15
ISSN :
0022-0248
HAL domain(s) :
Physique [physics]/Physique [physics]/Optique [physics.optics]
English abstract : [en]
BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional ...
Show more >BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3 nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX.Show less >
Show more >BGaN ternary alloys with 0.7% and 1.7% boron grown on GaN/sapphire template substrates by metalorganic vapour phase epitaxy (MOVPE) have been investigated through HAADF-STEM. At low boron content, 0.7%, no compositional fluctuations were observed with XRD or STEM measurements. Photoluminescence at room temperature was measured. At higher boron content, cubic BGaN nano-sized clusters were identified. The clusters are 3 nm wide, homogeneously distributed in size and in density and coherent with the surrounding wurtzite BGaN matrix. Their boron composition was estimated by EDX.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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