Title :

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Author(s) :

Xu, Z. [Auteur]
Saadsaoud, N. [Auteur]
Zegaoui, Malek [Auteur]
Loke, Wan Khai [Auteur]
Tan, Kianhuan [Auteur]
Wicaksono, S. [Auteur]
Yoon, Soon [Auteur]
Legrand, Christiane [Auteur]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]

Journal title :

IEEE Electron Device Letters

Pages :

449-451

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

2010

ISSN :

0741-3106

English keyword(s) :

Dilute nitride
GaNAsSb
Responsivity
Waveguide photodetector (WGPD)

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types ...
Show more >We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer, show high responsivity values of 0.72 and 0.55 A/W, respectively, at a reverse bias voltage of 10 V and a wavelength of 1.3 $\mu\hbox{m}$. These correspond to internal quantum efficiencies of 96.7% and 73.9%, respectively. A linear increase in photocurrent with an increase in optical power up to 8 mW and also a high reverse breakdown voltage of $-$16.6 V were obtained.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL