Title :

Terahertz generation and power limits in In0.53Ga0.47As photomixer coupled to transverse-electromagnetic-horn antenna driven at 1.55 µm wavelengths

Author(s) :

Mangeney, Juliette [Auteur]
Institut d'électronique fondamentale [IEF]
Meng, F. [Auteur]
Institut d'électronique fondamentale [IEF]
Gacemi, Djamal [Auteur]
Institut d'électronique fondamentale [IEF]
Peytavit, Emilien [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Akalin, Tahsin [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Applied Physics Letters

Pages :

161109-1-3

Publisher :

American Institute of Physics

Publication date :

2010

ISSN :

0003-6951

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

We report continuous wave generation at frequencies up to 2 THz using ion-irradiated In0.53Ga0.47As photomixers coupled to transverse-electromagnetic-horn antennae driven at 1.55 m wavelength. Output powers up to 0.1 W at ...
Show more >We report continuous wave generation at frequencies up to 2 THz using ion-irradiated In0.53Ga0.47As photomixers coupled to transverse-electromagnetic-horn antennae driven at 1.55 m wavelength. Output powers up to 0.1 W at 700 GHz have been achieved. The dependence of the output power on incident optical power and the bias voltage is analyzed in the both regimes of Ohmic transport and recombination-limited transport. The fundamental limitations of the performance of the photomixer devices based on photoconductive phenomenon in recombination-limited transport are analyzedShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL