Electron transport properties of gallium nitride for microscopic power device modelling

Benbakhti, Brahim; Rousseau, Michel; Soltani, Ali; De Jaeger, Jean-Claude

Type de document :

Compte-rendu et recension critique d'ouvrage

DOI :

10.1088/1742-6596/193/1/012005

Titre :

Electron transport properties of gallium nitride for microscopic power device modelling

Auteur(s) :

Benbakhti, Brahim [Auteur]
University of Glasgow
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, Ali [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Titre de la revue :

Journal of Physics: Conference Series

Pagination :

012005-1-4

Éditeur :

IOP Science

Date de publication :

2009

ISSN :

1742-6596

Discipline(s) HAL :

Sciences de l'ingénieur [physics]

Résumé en anglais : [en]

The design of power GaN devices has to take into account the impact of temperature on device materials due to highly dissipated power and a consequent large self-heating. The accurate knowledge of transport properties as ...
Lire la suite >The design of power GaN devices has to take into account the impact of temperature on device materials due to highly dissipated power and a consequent large self-heating. The accurate knowledge of transport properties as a function of the lattice temperature is essential in order to make a good thermal management to optimise the device performance. In this paper, accurate expressions describing the main transport properties as function of temperature and electric field for wurtzite GaN have been extracted starting from Monte Carlo simulations and then using a genetic algorithm. In particular, these expressions take into account the abrupt change in electron velocity slope at a low electric field (∼20 kV/cm). Using the same methodology, we have determined the temperature dependence of other physical parameters such as the low field mobility, saturation velocity, critical electric field and the corresponding peak velocity in a temperature range of 300 K – 700 K. The results show a very good agreement between the theoretical and experimental values.Lire moins >

Langue :

Anglais

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Fichiers

https://doi.org/10.1088/1742-6596/193/1/012005
Accès libre
Accéder au document

https://doi.org/10.1088/1742-6596/193/1/012005
Accès libre
Accéder au document

https://doi.org/10.1088/1742-6596/193/1/012005
Accès libre
Accéder au document

https://doi.org/10.1088/1742-6596/193/1/012005
Accès libre
Accéder au document

https://doi.org/10.1088/1742-6596/193/1/012005
Accès libre
Accéder au document

Electron transport properties of gallium ... BibTeX CSV Excel RIS

Fichiers

Electron transport properties of gallium ...

BibTeX

CSV

Excel

RIS