Effects of self-heating on performance ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Effects of self-heating on performance degradation in AlGaN/GaN-based devices
Auteur(s) :
Benbakhti, Brahim [Auteur]
University of Glasgow
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kalna, Karol [Auteur]
University of Glasgow
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
University of Glasgow
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Kalna, Karol [Auteur]
University of Glasgow
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
IEEE Transactions on Electron Devices
Pagination :
2178-2185
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2009-10
ISSN :
0018-9383
Mot(s)-clé(s) en anglais :
Gallium nitride
Substrates
Mathematical model
Aluminum gallium nitride
Temperature measurement
Lattices
Equations
Substrates
Mathematical model
Aluminum gallium nitride
Temperature measurement
Lattices
Equations
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
A self-consistent electrothermal transport model that couples electrical and thermal transport equations is established and applied to AlGaN/GaN device structures grown on the following three different substrate materials: ...
Lire la suite >A self-consistent electrothermal transport model that couples electrical and thermal transport equations is established and applied to AlGaN/GaN device structures grown on the following three different substrate materials: 1) SiC; 2) Si; and 3) sapphire . Both the resultant I - V characteristics and surface temperatures are compared to experimental I - V measurements and Raman spectroscopy temperature measurements. The very consistent agreement between measurements and simulations confirms the validity of the model and its numerical rendition. The results explain why the current saturation in measured I - V characteristics occurs at a much lower electric field than that for the saturation of electron drift velocity. The marked difference in saturated current levels for AlGaN/GaN structures on SiC, Si, and sapphire substrates is directly related to the different self-heating levels that resulted from the different biasing conditions and the distinctive substrate materials.Lire moins >
Lire la suite >A self-consistent electrothermal transport model that couples electrical and thermal transport equations is established and applied to AlGaN/GaN device structures grown on the following three different substrate materials: 1) SiC; 2) Si; and 3) sapphire . Both the resultant I - V characteristics and surface temperatures are compared to experimental I - V measurements and Raman spectroscopy temperature measurements. The very consistent agreement between measurements and simulations confirms the validity of the model and its numerical rendition. The results explain why the current saturation in measured I - V characteristics occurs at a much lower electric field than that for the saturation of electron drift velocity. The marked difference in saturated current levels for AlGaN/GaN structures on SiC, Si, and sapphire substrates is directly related to the different self-heating levels that resulted from the different biasing conditions and the distinctive substrate materials.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :