AlGaN/GaN MISHEMT with hBN as gate dielectric

Gerbedoen, J.C.; Soltani, A.; Mattalah, M.; Moreau, M.; Thevenin, P.; De Jaeger, J.C.

Document type :

Autre communication scientifique (congrès sans actes - poster - séminaire...)

DOI :

10.1016/j.diamond.2009.02.018

Permalink :

http://hdl.handle.net/20.500.12210/50451

Title :

AlGaN/GaN MISHEMT with hBN as gate dielectric

Author(s) :

Gerbedoen, J.C. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, A. [Auteur correspondant]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mattalah, M. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Moreau, M. [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Thevenin, P. [Auteur]
Laboratoire Matériaux Optiques, Photonique et Systèmes [LMOPS]
De Jaeger, J.C. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Publisher :

Elsevier

Publication date :

2009

English keyword(s) :

Gate dielectric
HBN thin film
HEMTs
MISHEMTs

HAL domain(s) :

Chimie/Matériaux

English abstract : [en]

Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by ...
Show more >Metal/Insulator/Semiconductor AlGaN/GaN High Electron Mobility Transistors (MISHEMTs) on sapphire substrate were fabricated with hexagonal Boron Nitride (hBN) thin film as gate dielectric. The hBN thin film, deposited by MW-PECVD, is an insulator permitting to obtain a low leakage current gate, an interface state density as low as 5 × 1011 cm<sup>−2 </sup> eV<sup>−1</sup> for hBN/AlGaN interface and low roughness surface less than 0.4 nm. HBN thin film is deposited to have optical c-axis oriented weakly tilted to the perpendicular at the AlGaN barrier surface and to increase the lateral electrical resistivity. DC measurement on MISHEMT exhibits promising performance for microwave power devices associated to a good gate charge control in enhancement mode.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2021-07-27T19:09:40Z

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AlGaN/GaN MISHEMT with hBN as gate dielectric

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