• English
    • français
  • Help
  •  | 
  • Contact
  •  | 
  • About
  •  | 
  • Login
  • HAL portal
  •  | 
  • Pages Pro
  • EN
  •  / 
  • FR
View Item 
  •   LillOA Home
  • Liste des unités
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
  • View Item
  •   LillOA Home
  • Liste des unités
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Nonlinear effects in split ring resonators ...
  • BibTeX
  • CSV
  • Excel
  • RIS

Document type :
Article dans une revue scientifique
DOI :
10.1002/mop.23122
Title :
Nonlinear effects in split ring resonators loaded with heterostructure barrier varactors
Author(s) :
Carbonell, Jorge [Auteur]
Boria, Vicente [Auteur]
Lippens, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS
Pages :
474-479
Publisher :
Wiley
Publication date :
2008-02
ISSN :
0895-2477
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The advantages afforded by the symmetrical C(V) characteristics of Heterostructure Barrier Varactor (HBV) diodes for the fabrication of nonlinear metamaterials are investigated numerically. The studies are conducted by ...
Show more >
The advantages afforded by the symmetrical C(V) characteristics of Heterostructure Barrier Varactor (HBV) diodes for the fabrication of nonlinear metamaterials are investigated numerically. The studies are conducted by means of full-wave numerical modelling along with circuit analysis. It is believed that the HBV technologies can replace the conventional Schottky diode not only in up and down frequency conversion left-handed devices, but also by bringing new functionality in terms of space filtering for unbiased devices.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Collections :
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Source :
Harvested from HAL
Files
Thumbnail
  • https://api.istex.fr/document/D5E1C14FB2BC61C3CBC447747A6D8BBC027C1E12/fulltext/pdf?sid=hal
  • Open access
  • Access the document
Thumbnail
  • https://api.istex.fr/document/D5E1C14FB2BC61C3CBC447747A6D8BBC027C1E12/fulltext/pdf?sid=hal
  • Open access
  • Access the document
Thumbnail
  • https://api.istex.fr/document/D5E1C14FB2BC61C3CBC447747A6D8BBC027C1E12/fulltext/pdf?sid=hal
  • Open access
  • Access the document
Thumbnail
  • https://api.istex.fr/document/D5E1C14FB2BC61C3CBC447747A6D8BBC027C1E12/fulltext/pdf?sid=hal
  • Open access
  • Access the document
Thumbnail
  • https://api.istex.fr/document/D5E1C14FB2BC61C3CBC447747A6D8BBC027C1E12/fulltext/pdf?sid=hal
  • Open access
  • Access the document
Thumbnail
  • https://api.istex.fr/document/D5E1C14FB2BC61C3CBC447747A6D8BBC027C1E12/fulltext/pdf?sid=hal
  • Open access
  • Access the document
Thumbnail
  • https://api.istex.fr/document/D5E1C14FB2BC61C3CBC447747A6D8BBC027C1E12/fulltext/pdf?sid=hal
  • Open access
  • Access the document
Thumbnail
  • https://api.istex.fr/document/D5E1C14FB2BC61C3CBC447747A6D8BBC027C1E12/fulltext/pdf?sid=hal
  • Open access
  • Access the document
Thumbnail
  • fulltext.pdf
  • Open access
  • Access the document
Université de Lille

Mentions légales
Université de Lille © 2017