Effect of growth temperature on defect ...
Document type :
Article dans une revue scientifique: Article original
DOI :
Title :
Effect of growth temperature on defect states of GaNAsSb intrinsic layer in GaAs/GaNAsSb/GaAs photodiode for 1.3µm application
Author(s) :
Wicaksono, Satrio [Auteur]
Nanyang Technological University [Singapour] [NTU]
Yoon, Soon [Auteur]
Nanyang Technological University [Singapour] [NTU]
Loke, Wan Khai [Auteur]
Nanyang Technological University [Singapour] [NTU]
Tan, Kianhuan [Auteur]
Nanyang Technological University [Singapour] [NTU]
Lew, Kim Luong [Auteur]
Nanyang Technological University [Singapour] [NTU]
Zegaoui, Malek [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Decoster, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
Thales Air Systems
Nanyang Technological University [Singapour] [NTU]
Yoon, Soon [Auteur]
Nanyang Technological University [Singapour] [NTU]
Loke, Wan Khai [Auteur]
Nanyang Technological University [Singapour] [NTU]
Tan, Kianhuan [Auteur]
Nanyang Technological University [Singapour] [NTU]
Lew, Kim Luong [Auteur]
Nanyang Technological University [Singapour] [NTU]
Zegaoui, Malek [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Decoster, Didier [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Chazelas, Jean [Auteur]
Thales Air Systems
Journal title :
Journal of Applied Physics
Pages :
044505
Publisher :
American Institute of Physics
Publication date :
2007
ISSN :
0021-8979
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
A GaAsSbN layer closely lattice matched to GaAs was used as an intrinsic layer (i layer) in a GaAsGaAsSbNGaAs p-i-n photodiode with response up to 1.3 μm. Deep level transient spectroscopy measurement on the GaAsGaAsSbNGaAs ...
Show more >A GaAsSbN layer closely lattice matched to GaAs was used as an intrinsic layer (i layer) in a GaAsGaAsSbNGaAs p-i-n photodiode with response up to 1.3 μm. Deep level transient spectroscopy measurement on the GaAsGaAsSbNGaAs reveals two types of hole traps (HTs) in the GaAsSbN i layer; (i) HT1: a shallow N-related defect state (Ea ∼0.10-0.12 eV) and (ii) HT2: an AsGa point defect-related midgap defect state with Ea ∼0.42-0.43 eV. Reduction in growth temperature from 480 to 420 °C reduces the HT2 trap concentration from 4× 1015 to 1× 1015 cm-3, while increases the HT1 trap concentration from 1× 1014 to 7× 1014 cm-3. Reduction in the HT2 trap concentration following growth temperature reduction was attributed to the suppression of AsGa point defect formation. Evidence of possible change of the AsGa midgap state to a shallow level defect due to the formation of (AsGa - NAs) pairs was also suggested to have increased the HT1 trap concentration and reduced the HT2 trap concentration. An ∼4 dBm improvement in photoresponse under 1.3 μm laser excitation and approximately eight times reduction in dark current at -8 V reverse bias were attributed to the reduction in the overall trap concentration and mainly the reduction of the AsGa -related midgap trap concentration in the sample grown at 420 °C.Show less >
Show more >A GaAsSbN layer closely lattice matched to GaAs was used as an intrinsic layer (i layer) in a GaAsGaAsSbNGaAs p-i-n photodiode with response up to 1.3 μm. Deep level transient spectroscopy measurement on the GaAsGaAsSbNGaAs reveals two types of hole traps (HTs) in the GaAsSbN i layer; (i) HT1: a shallow N-related defect state (Ea ∼0.10-0.12 eV) and (ii) HT2: an AsGa point defect-related midgap defect state with Ea ∼0.42-0.43 eV. Reduction in growth temperature from 480 to 420 °C reduces the HT2 trap concentration from 4× 1015 to 1× 1015 cm-3, while increases the HT1 trap concentration from 1× 1014 to 7× 1014 cm-3. Reduction in the HT2 trap concentration following growth temperature reduction was attributed to the suppression of AsGa point defect formation. Evidence of possible change of the AsGa midgap state to a shallow level defect due to the formation of (AsGa - NAs) pairs was also suggested to have increased the HT1 trap concentration and reduced the HT2 trap concentration. An ∼4 dBm improvement in photoresponse under 1.3 μm laser excitation and approximately eight times reduction in dark current at -8 V reverse bias were attributed to the reduction in the overall trap concentration and mainly the reduction of the AsGa -related midgap trap concentration in the sample grown at 420 °C.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :
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