Title :

Investigation of the thermal boundary resistance at the III-Nitride/substrate interface using optical methods

Author(s) :

Kuzmik, J. [Auteur correspondant]
Bychikhin, S. [Auteur]
Pogany, D. [Auteur]
Gaquière, C. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pichonat, E. [Auteur]
Laboratoire Avancé de Spectroscopie pour les Intéractions la Réactivité et l'Environnement - UMR 8516 [LASIRE]
Morvan, E. [Auteur]

Publisher :

American Institute of Physics

Publication date :

2007

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

Heat removal from III-Nitride-based devices into a substrate depends also on an acoustic coupling at III-Nitride/substrate interface. We investigate thermal boundary resistance (TBR) and its effects on temperature distribution ...
Show more >Heat removal from III-Nitride-based devices into a substrate depends also on an acoustic coupling at III-Nitride/substrate interface. We investigate thermal boundary resistance (TBR) and its effects on temperature distribution for GaN layers on Si, SiC, or sapphire substrates. Micro-Raman method is used for the investigation of TBR at the GaN/Si interface while the transient interferometric mapping (TIM) method is used for investigation of GaN/SiC and GaN/sapphire systems. Thermal modeling is used to analyze the experimental data. We found TBR to be ~7×10−8 m2 K/W for GaN/Si and ~1.2×10−7 m2 K/W for GaN/SiC interfaces. The role of TBR at the GaN/sapphire interface in the poor heat transfer from GaN to substrate is found to be less important. It is suggested that the substrate cooling efficiency may be improved if fewer defects are present at the interface to the GaN epistructure. ©2007 American Institute of PhysicsShow less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2021-07-27T20:42:04Z