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A 200-GHz true E-mode low-noise MHEMT
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Document type :
Article dans une revue scientifique
DOI :
10.1109/TED.2007.899377
Title :
A 200-GHz true E-mode low-noise MHEMT
Author(s) :
Maher, Hassan [Auteur]
OMMIC
El Makoudi, Ikram [Auteur]
OMMIC
Frijlink, Peter [Auteur]
OMMIC
Smith, Derek [Auteur]
OMMIC
Rocchi, Marc [Auteur]
OMMIC
Bollaert, S. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lepilliet, Sylvie [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dambrine, Gilles [Auteur] refId
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
IEEE Transactions on Electron Devices
Pages :
1626-1632
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2007-07
ISSN :
0018-9383
English keyword(s) :
Logic gates
Threshold voltage
Leakage currents
HEMTs
Indium
Resistance
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
In this paper, a fully passivated true enhancement mode 110-nm metamorphic high-electron mobility transistor (E-MHEMT) on GaAs substrate with excellent dc and RF performance has been developed. By choosing an indium content ...
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In this paper, a fully passivated true enhancement mode 110-nm metamorphic high-electron mobility transistor (E-MHEMT) on GaAs substrate with excellent dc and RF performance has been developed. By choosing an indium content of 40% for the AlInAs/GalnAs/AlInAs MHEMT, the difference between the Schottky-barrier height and the conductance band-offset (channel/barrier) of the device is enhanced compared with 53% indium devices lattice matched to an InP substrate. A true E-MHEMT is demonstrated with an extremely low leakage current, wide gate-voltage swing, and excellent dynamic performance. The threshold-voltage standard deviation is only 12 mV on four wafers. The device presents an excellent unity gain cutoff frequency of 204 GHz with state-of-the-art NF min = 0.69 dB and Gass = 10 dB at 30 GHz. This transistor is a good candidate for high-speed digital, high-frequency analog, or mixed applications, where the low noise, low-power consumption, and digital capabilities of this technology are distinct advantages.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Collections :
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Source :
Harvested from HAL
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