Enhancement mode metamorphic In0.33Al0.6 ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Enhancement mode metamorphic In0.33Al0.67As/In0.34Ga0.66As HEMT on GaAs substrate with high breakdown voltage
Author(s) :
Boudrissa, Mustafa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delos, Elisabet [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cordier, Yvon [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Théron, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delos, Elisabet [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cordier, Yvon [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Théron, Didier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
IEEE Electron Device Letters
Pages :
512-514
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2000-11
ISSN :
0741-3106
English keyword(s) :
HEMTs
Gallium arsenide
Substrates
Voltage
Impact ionization
Indium phosphide
Charge carrier density
mHEMTs
Current density
Large-scale systems
Gallium arsenide
Substrates
Voltage
Impact ionization
Indium phosphide
Charge carrier density
mHEMTs
Current density
Large-scale systems
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
This paper presents original and experimental results provided by E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As metamorphic HEMT. The devices exhibit good dc and rf performances. The 0.4 μm gate length devices ...
Show more >This paper presents original and experimental results provided by E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As metamorphic HEMT. The devices exhibit good dc and rf performances. The 0.4 μm gate length devices have saturation current density of 355 mA/mm at +0.6 V gate-to-source voltage. The Schottky characteristic is a typical reverse gate-to-drain breakdown voltage of -16 V. It is the first time, to our knowledge, that gate current issued from impact ionization have been observed in these devices versus gate to drain extension. These results are the first reported for E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As MM-HEMTs on GaAs substrate.Show less >
Show more >This paper presents original and experimental results provided by E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As metamorphic HEMT. The devices exhibit good dc and rf performances. The 0.4 μm gate length devices have saturation current density of 355 mA/mm at +0.6 V gate-to-source voltage. The Schottky characteristic is a typical reverse gate-to-drain breakdown voltage of -16 V. It is the first time, to our knowledge, that gate current issued from impact ionization have been observed in these devices versus gate to drain extension. These results are the first reported for E-mode Al/sub 0.67/In/sub 0.33/As/Ga/sub 0.66/In/sub 0.34/As MM-HEMTs on GaAs substrate.Show less >
Language :
Anglais
Popular science :
Non
Source :