Giant magnetostriction (GMS) of TbFe ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Giant magnetostriction (GMS) of TbFe monolayer with improved field-induced anisotropy and sensitivity
Auteur(s) :
Gall, Henri Le [Auteur]
Laboratoire de magnétisme de Bretagne [LMB]
Youssef, Jamal Ben [Auteur]
Laboratoire de magnétisme de Bretagne [LMB]
Ostorero, J. [Auteur]
Tiercelin, Nicolas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pernod, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Preobrazhensky, Vladimir [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Laboratoire de magnétisme de Bretagne [LMB]
Youssef, Jamal Ben [Auteur]
Laboratoire de magnétisme de Bretagne [LMB]
Ostorero, J. [Auteur]
Tiercelin, Nicolas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pernod, Philippe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Preobrazhensky, Vladimir [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
IEEE Transactions on Magnetics
Pagination :
3223-3225
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2000
ISSN :
0018-9464
Mot(s)-clé(s) en anglais :
Magnetostriction
Amorphous magnetic materials
Saturation magnetization
Sputtering
Amorphous materials
Transistors
Magnetic materials
Microelectromechanical systems
Micromechanical devices
Radio frequency
Amorphous magnetic materials
Saturation magnetization
Sputtering
Amorphous materials
Transistors
Magnetic materials
Microelectromechanical systems
Micromechanical devices
Radio frequency
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
Giant magnetostriction, (GMS), reported until now in thin films using rare earth-transition metal RM/sub 2/ (R=Tb, Sm, and M=Fe, Co) compounds, presents in most cases an isotropic or quasi-isotropic magnetoelastic (ME) ...
Lire la suite >Giant magnetostriction, (GMS), reported until now in thin films using rare earth-transition metal RM/sub 2/ (R=Tb, Sm, and M=Fe, Co) compounds, presents in most cases an isotropic or quasi-isotropic magnetoelastic (ME) behavior. A large change of the ME coefficient b under the lowest possible external field is required in order to improve the sensitivity of these materials which are interesting for their application in microelectromechanical systems (MEMS). The present paper shows the possibility of improving strongly both the ME coefficient and sensitivity. Optimized ME properties are correlated with the sputtering parameters such as the RF power P/sub rf/ and the sputtering gas pressure P/sub Ar/. The magnetostriction increases with P/sub rf/ up to very large saturation values not observed until now in TbFe films (/spl Delta/l/l=1300 ppm or b/sup /spl gamma/,2/=50 MPa at 20 kOe) due to a structural change from amorphous at low P/sub rf/ to crystallized phase at a high P/sub rf/ as confirmed from XRD. When a bias magnetic field H/sub d/ is applied on the film during deposition a strong change is seen in the structural, elastic, magnetic and ME properties, H/sub d/ keeps the amorphous phase even at high P/sub rf/ which induces a reduction of the ME "linewidth" but an increase of the GMS sensitivity.Lire moins >
Lire la suite >Giant magnetostriction, (GMS), reported until now in thin films using rare earth-transition metal RM/sub 2/ (R=Tb, Sm, and M=Fe, Co) compounds, presents in most cases an isotropic or quasi-isotropic magnetoelastic (ME) behavior. A large change of the ME coefficient b under the lowest possible external field is required in order to improve the sensitivity of these materials which are interesting for their application in microelectromechanical systems (MEMS). The present paper shows the possibility of improving strongly both the ME coefficient and sensitivity. Optimized ME properties are correlated with the sputtering parameters such as the RF power P/sub rf/ and the sputtering gas pressure P/sub Ar/. The magnetostriction increases with P/sub rf/ up to very large saturation values not observed until now in TbFe films (/spl Delta/l/l=1300 ppm or b/sup /spl gamma/,2/=50 MPa at 20 kOe) due to a structural change from amorphous at low P/sub rf/ to crystallized phase at a high P/sub rf/ as confirmed from XRD. When a bias magnetic field H/sub d/ is applied on the film during deposition a strong change is seen in the structural, elastic, magnetic and ME properties, H/sub d/ keeps the amorphous phase even at high P/sub rf/ which induces a reduction of the ME "linewidth" but an increase of the GMS sensitivity.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :