Piezoelectric properties of PZT: influence ...
Type de document :
Article dans une revue scientifique
Titre :
Piezoelectric properties of PZT: influence of (Zr/Ti) ratio and niobium substitution
Auteur(s) :
Titre de la revue :
Ferroelectrics
Pagination :
185-195
Éditeur :
Taylor & Francis: STM, Behavioural Science and Public Health Titles
Date de publication :
2001
ISSN :
0015-0193
Mot(s)-clé(s) en anglais :
r.f.sputtering
Pb(ZrTi)Ox
various Zr/Ti
Nb doped
dielectric
ferroelectric
piezoelectric
Pb(ZrTi)Ox
various Zr/Ti
Nb doped
dielectric
ferroelectric
piezoelectric
Discipline(s) HAL :
Physique [physics]/Matière Condensée [cond-mat]/Science des matériaux [cond-mat.mtrl-sci]
Résumé en anglais : [en]
Pb(Zr,Ti)03 (PZT) and Pb(Zr,Ti,Nb)O, (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. PZT films with various Zrmi compositions ranging from ...
Lire la suite >Pb(Zr,Ti)03 (PZT) and Pb(Zr,Ti,Nb)O, (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. PZT films with various Zrmi compositions ranging from 15/85 to 70/30 were grown; for PNZT films (the ratio Zrni is fixed to 54/46) the Niobium concentration varied from 1 to 7 at.% by increment of 1 at.%. The main objective of this work is to determine the effects of the Zrni ratio and the Nb concentration on the electrical properties of PZT thin films. The dielectric, ferroelectric and piezoelectric properties of the films were systematically evaluated. In particular, the piezoelectric properties were very sensitive to the Nb substitution and the ZrRi ratio.Lire moins >
Lire la suite >Pb(Zr,Ti)03 (PZT) and Pb(Zr,Ti,Nb)O, (PNZT) thin films were grown on platinized silicon substrates by r.f. magnetron sputtering followed by a post-annealing treatment. PZT films with various Zrmi compositions ranging from 15/85 to 70/30 were grown; for PNZT films (the ratio Zrni is fixed to 54/46) the Niobium concentration varied from 1 to 7 at.% by increment of 1 at.%. The main objective of this work is to determine the effects of the Zrni ratio and the Nb concentration on the electrical properties of PZT thin films. The dielectric, ferroelectric and piezoelectric properties of the films were systematically evaluated. In particular, the piezoelectric properties were very sensitive to the Nb substitution and the ZrRi ratio.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Non spécifiée
Vulgarisation :
Non
Source :
Fichiers
- https://hal.archives-ouvertes.fr/hal-00152479/document
- Accès libre
- Accéder au document