Theory of electronic transport in semiconductor ...
Document type :
Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes
DOI :
Title :
Theory of electronic transport in semiconductor nanostructures
Author(s) :
Niquet, Yann-Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Laboratoire matériaux et microélectronique de Provence [L2MP]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Laboratoire matériaux et microélectronique de Provence [L2MP]
Conference title :
Proceedings of the 2002 Materials Research Society Fall Meeting, Symposium F : Nanocrystalline Semiconductor Materials and Devices
City :
Boston, MA
Country :
Etats-Unis d'Amérique
Start date of the conference :
2002-12-01
Publication date :
2002
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
We review the orthodox theory of single charge tunneling in a semiconductor quantum dot and we extend it to treat both single electron and hole charging effects. We analyze recent tunneling spectroscopy experiments. We ...
Show more >We review the orthodox theory of single charge tunneling in a semiconductor quantum dot and we extend it to treat both single electron and hole charging effects. We analyze recent tunneling spectroscopy experiments. We show that for sufficiently large bias voltages V, both electrons and holes can tunnel into the quantum dot, leading to specific features in the I(V) curve. We present detailed simulations of the I(V) curves based a tight binding method for the electronic structure. A very good agreement is obtained with available experiments on InAs nanocrystals, allowing a complete interpretation of the spectra. Finally, we make some predictions concerning Si nanocrystalsShow less >
Show more >We review the orthodox theory of single charge tunneling in a semiconductor quantum dot and we extend it to treat both single electron and hole charging effects. We analyze recent tunneling spectroscopy experiments. We show that for sufficiently large bias voltages V, both electrons and holes can tunnel into the quantum dot, leading to specific features in the I(V) curve. We present detailed simulations of the I(V) curves based a tight binding method for the electronic structure. A very good agreement is obtained with available experiments on InAs nanocrystals, allowing a complete interpretation of the spectra. Finally, we make some predictions concerning Si nanocrystalsShow less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :