Interpretation and theory of tunneling ...
Document type :
Article dans une revue scientifique
Title :
Interpretation and theory of tunneling experiments on single nanostructures
Author(s) :
Niquet, Yann-Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Institut des Sciences de l'Evolution de Montpellier [UMR ISEM]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Delerue, Christophe [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Allan, Guy [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lannoo, Michel [Auteur]
Institut des Sciences de l'Evolution de Montpellier [UMR ISEM]
Journal title :
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Pages :
165334/1-14
Publisher :
American Physical Society
Publication date :
2002
ISSN :
1098-0121
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
We discuss the interpretation of tunneling experiments on single molecules or semiconductor quantum dots weakly coupled to metallic electrodes. We identify the main features in the current-voltage curves and in the conductance ...
Show more >We discuss the interpretation of tunneling experiments on single molecules or semiconductor quantum dots weakly coupled to metallic electrodes. We identify the main features in the current-voltage curves and in the conductance using an extension of the theory of single charge tunneling. We analyze important quantities, such as the charging energy and the quasiparticle gap, providing simple rules to interpret the experiments. We discuss the limitations of the capacitance model to describe the system. We show that at a bias larger than the band-gap energy of the nanostructure the tunneling of both electrons and holes must be taken into account. We use self-consistent tight-binding calculations to illustrate these points and provide a comparison with recent experimental results on InAs nanocrystalsShow less >
Show more >We discuss the interpretation of tunneling experiments on single molecules or semiconductor quantum dots weakly coupled to metallic electrodes. We identify the main features in the current-voltage curves and in the conductance using an extension of the theory of single charge tunneling. We analyze important quantities, such as the charging energy and the quasiparticle gap, providing simple rules to interpret the experiments. We discuss the limitations of the capacitance model to describe the system. We show that at a bias larger than the band-gap energy of the nanostructure the tunneling of both electrons and holes must be taken into account. We use self-consistent tight-binding calculations to illustrate these points and provide a comparison with recent experimental results on InAs nanocrystalsShow less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Source :