Analysis of thermal effect influence in ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Analysis of thermal effect influence in gallium-nitride-based TLM structures by means of a transport-thermal modeling
Auteur(s) :
Benbakhti, Brahim [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Rousseau, Michel [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Soltani, Ali [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
De Jaeger, Jean-Claude [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
IEEE Transactions on Electron Devices
Pagination :
2237-2242
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2006-09
ISSN :
0018-9383
Mot(s)-clé(s) en anglais :
gallium compounds
heat conduction
III-V semiconductors
semiconductor device measurement
semiconductor device models
thermal analysis
thermal management (packaging)
heat conduction
III-V semiconductors
semiconductor device measurement
semiconductor device models
thermal analysis
thermal management (packaging)
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
The power dissipation in a semiconductor device usually generates a self-heating effect, which becomes very significant for gallium nitride power applications. The operating temperature of these devices increases significantly, ...
Lire la suite >The power dissipation in a semiconductor device usually generates a self-heating effect, which becomes very significant for gallium nitride power applications. The operating temperature of these devices increases significantly, and the transport properties are then degraded (IEEE Electron Device Lett., vol. 24, p. 375, 2003; IEEE Electron Device Lett., vol. 49, p. 1496, 2002; IEEE Trans. Electron Devices, vol. 52, p. 1683, 2005). Taking heating effects into account explains the physical phenomena observed in experiments, due in particular to the fact that temperature greatly affects the velocity. In this paper, numerical simulations are carried out to study the influence of thermal effects on the static characteristics of GaN transmission line measurement (TLM) model structures. A transport-thermal model is thus developed in order to take into account both the electrical and the thermal phenomena in a coupled way. This paper uses GaN TLMs on sapphire substrates. Simulations have shown that the saturation current is reached for electric fields much lower than the saturation electric field, thus confirming the experimental resultsLire moins >
Lire la suite >The power dissipation in a semiconductor device usually generates a self-heating effect, which becomes very significant for gallium nitride power applications. The operating temperature of these devices increases significantly, and the transport properties are then degraded (IEEE Electron Device Lett., vol. 24, p. 375, 2003; IEEE Electron Device Lett., vol. 49, p. 1496, 2002; IEEE Trans. Electron Devices, vol. 52, p. 1683, 2005). Taking heating effects into account explains the physical phenomena observed in experiments, due in particular to the fact that temperature greatly affects the velocity. In this paper, numerical simulations are carried out to study the influence of thermal effects on the static characteristics of GaN transmission line measurement (TLM) model structures. A transport-thermal model is thus developed in order to take into account both the electrical and the thermal phenomena in a coupled way. This paper uses GaN TLMs on sapphire substrates. Simulations have shown that the saturation current is reached for electric fields much lower than the saturation electric field, thus confirming the experimental resultsLire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :