An 8-GHz ft carbon nanotube field-effect ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
An 8-GHz ft carbon nanotube field-effect-transistor for gigahertz range applications
Author(s) :
Bethoux, Jean-Marc [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dambrine, Gilles [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Derycke, Vincent [Auteur]
Laboratoire d'Electronique Moléculaire [LEM]
Goffman, M. F. [Auteur]
Laboratoire d'Electronique Moléculaire [LEM]
Bourgoin, Jean-Philippe [Auteur]
Laboratoire d'Electronique Moléculaire [LEM]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dambrine, Gilles [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Derycke, Vincent [Auteur]
Laboratoire d'Electronique Moléculaire [LEM]
Goffman, M. F. [Auteur]
Laboratoire d'Electronique Moléculaire [LEM]
Bourgoin, Jean-Philippe [Auteur]
Laboratoire d'Electronique Moléculaire [LEM]
Journal title :
IEEE Electron Device Letters
Pages :
681-683
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2006-08
ISSN :
0741-3106
English keyword(s) :
Carbon nanotube field-effect transistor (CNFET)
gigahertz
high frequency (HF)
gigahertz
high frequency (HF)
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
In this letter, the authors report on the highfrequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes have been ...
Show more >In this letter, the authors report on the highfrequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H21|2) cutoff frequency (ft ) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivableShow less >
Show more >In this letter, the authors report on the highfrequency (HF) performance of self-assembled carbon nanotube field-effect transistors. HF device structures including a large number of singlewall carbon nanotubes have been designed and optimized in order to establish a new state of the art. The device exhibits a current gain (|H21|2) cutoff frequency (ft ) of 8 GHz and a maximum stable gain value of 10 dB at 1 GHz, after de-embedding the access pads. Considering such results, nanotube-based circuits with gigahertz performance are now conceivableShow less >
Language :
Anglais
Popular science :
Non
Source :