Title :

Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy

Author(s) :

Vignaud, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mollot, F. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Journal of Applied Physics

Pages :

384

Publisher :

American Institute of Physics

Publication date :

2003

ISSN :

0021-8979

HAL domain(s) :

Sciences de l'ingénieur [physics]/Electronique

English abstract : [en]

The conducton band offset (CBO) in the AlxGayIn1-x-yP/Ga0.52In0.4 8P heterostructures was measured and analyzed. The methods employed for the measurement included photoluminescence and photoluminescence excitation spectroscopy. ...
Show more >The conducton band offset (CBO) in the AlxGayIn1-x-yP/Ga0.52In0.4 8P heterostructures was measured and analyzed. The methods employed for the measurement included photoluminescence and photoluminescence excitation spectroscopy. The parameters involved in the model solid theory were masured precisely. It was concluded through estimation of parameters of the model solid theory that strained AlxGayIn1-x-yP cannot improve the conduction offset compared to the strain-free material.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL