Conduction band offset in the AlxGayIn1– ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Conduction band offset in the AlxGayIn1–x–yP/Ga0.52In0.48P system as studied by luminescence spectroscopy
Auteur(s) :
Vignaud, Dominique [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mollot, F. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mollot, F. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
Journal of Applied Physics
Pagination :
384
Éditeur :
American Institute of Physics
Date de publication :
2003
ISSN :
0021-8979
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Electronique
Résumé en anglais : [en]
The conducton band offset (CBO) in the AlxGayIn1-x-yP/Ga0.52In0.4 8P heterostructures was measured and analyzed. The methods employed for the measurement included photoluminescence and photoluminescence excitation spectroscopy. ...
Lire la suite >The conducton band offset (CBO) in the AlxGayIn1-x-yP/Ga0.52In0.4 8P heterostructures was measured and analyzed. The methods employed for the measurement included photoluminescence and photoluminescence excitation spectroscopy. The parameters involved in the model solid theory were masured precisely. It was concluded through estimation of parameters of the model solid theory that strained AlxGayIn1-x-yP cannot improve the conduction offset compared to the strain-free material.Lire moins >
Lire la suite >The conducton band offset (CBO) in the AlxGayIn1-x-yP/Ga0.52In0.4 8P heterostructures was measured and analyzed. The methods employed for the measurement included photoluminescence and photoluminescence excitation spectroscopy. The parameters involved in the model solid theory were masured precisely. It was concluded through estimation of parameters of the model solid theory that strained AlxGayIn1-x-yP cannot improve the conduction offset compared to the strain-free material.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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