Title :

94 GHz pulsed silicon IMPATT oscillator modelling

Author(s) :

Beaussart, Stéphane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Perrin, Olivier [Auteur]
Friscourt, Marie-Renée [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dalle, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

IEEE Transactions on Microwave Theory and Techniques

Pages :

1382-1390

Publisher :

Institute of Electrical and Electronics Engineers

Publication date :

1998

ISSN :

0018-9480

English keyword(s) :

Silicon
Oscillators
Semiconductor diodes
Radio frequency
Time domain analysis
Temperature
Numerical models
Isothermal processes
Circuits
Radar

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain ...
Show more >A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain isothermal model, and time-domain electro-thermal model, which basically rely on a diode one-dimensional bipolar drift-diffusion model embedded in a time-domain circuit modeling. In this paper, they are first used to investigate the 94-GHz diode intrinsic operation and performance. Secondly, the load-impedance level has been optimized. In each case, the thermal behavior is especially considered. Thirdly, pulse-operation-simulation results are compared with experiments performed at Thomson CSF, Radars et Contre-Mesures, Elancourt, France. Finally, some improvements of the present modeling are discussed in Section VI.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Non spécifiée

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL