• English
    • français
  • Help
  •  | 
  • Contact
  •  | 
  • About
  •  | 
  • Login
  • HAL portal
  •  | 
  • Pages Pro
  • EN
  •  / 
  • FR
View Item 
  •   LillOA Home
  • Liste des unités
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
  • View Item
  •   LillOA Home
  • Liste des unités
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

94 GHz pulsed silicon IMPATT oscillator modelling
  • BibTeX
  • CSV
  • Excel
  • RIS

Document type :
Article dans une revue scientifique
DOI :
10.1109/22.721139
Title :
94 GHz pulsed silicon IMPATT oscillator modelling
Author(s) :
Beaussart, Stéphane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Perrin, Olivier [Auteur]
Friscourt, Marie-Renée [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dalle, Christophe [Auteur] refId
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
IEEE Transactions on Microwave Theory and Techniques
Pages :
1382-1390
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
1998
ISSN :
0018-9480
English keyword(s) :
Silicon
Oscillators
Semiconductor diodes
Radio frequency
Time domain analysis
Temperature
Numerical models
Isothermal processes
Circuits
Radar
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain ...
Show more >
A new type of 94-GHz pulsed silicon impact avalanche and transit time (IMPATT) oscillator numerical modeling is described. It consists of a set of three models of increasing complexity; namely, a pure sine model, time-domain isothermal model, and time-domain electro-thermal model, which basically rely on a diode one-dimensional bipolar drift-diffusion model embedded in a time-domain circuit modeling. In this paper, they are first used to investigate the 94-GHz diode intrinsic operation and performance. Secondly, the load-impedance level has been optimized. In each case, the thermal behavior is especially considered. Thirdly, pulse-operation-simulation results are compared with experiments performed at Thomson CSF, Radars et Contre-Mesures, Elancourt, France. Finally, some improvements of the present modeling are discussed in Section VI.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Non spécifiée
Popular science :
Non
Collections :
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Source :
Harvested from HAL
Université de Lille

Mentions légales
Université de Lille © 2017