Experimental observation and modeling of ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Experimental observation and modeling of the impact of traps on static and analog/HF performance of graphene transistors
Auteur(s) :
Pacheco-Sanchez, Anibal [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Mavredakis, Nikolaos [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Feijoo, Pedro C. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Wei, Wei [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur]
Carbon - IEMN [CARBON - IEMN]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Jimenez, David [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Mavredakis, Nikolaos [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Feijoo, Pedro C. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Wei, Wei [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur]
Carbon - IEMN [CARBON - IEMN]
Happy, Henri [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Jimenez, David [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Titre de la revue :
IEEE Transactions on Electron Devices
Pagination :
5790-5796
Éditeur :
Institute of Electrical and Electronics Engineers
Date de publication :
2020
ISSN :
0018-9383
Mot(s)-clé(s) en anglais :
Logic gates
Graphene
Hysteresis
Performance evaluation
Transistors
Pulse measurements
Voltage measurement
Analytical model
channel potential
graphene field-effect transistor (GFET)
high-frequency (HF) performance
hysteresis
opposing pulses
traps
Graphene
Hysteresis
Performance evaluation
Transistors
Pulse measurements
Voltage measurement
Analytical model
channel potential
graphene field-effect transistor (GFET)
high-frequency (HF) performance
hysteresis
opposing pulses
traps
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Electronique
Résumé en anglais : [en]
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is ...
Lire la suite >The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-reduced experimental data enable a discussion regarding the impact of traps on static and dynamic device performance. An analytical drain current model calibrated with the experimental data enables the study of the trap effects on the channel potential within the device. High-frequency (HF) figures of merit and the intrinsic gain of the device obtained from both experimental and synthetic data with and without hysteresis show the importance of considering the generally overlooked impact of traps for analog and HF applications.Lire moins >
Lire la suite >The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and suitable approach to obtain reproducible device characteristics. Trap-affected and trap-reduced experimental data enable a discussion regarding the impact of traps on static and dynamic device performance. An analytical drain current model calibrated with the experimental data enables the study of the trap effects on the channel potential within the device. High-frequency (HF) figures of merit and the intrinsic gain of the device obtained from both experimental and synthetic data with and without hysteresis show the importance of considering the generally overlooked impact of traps for analog and HF applications.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Projet Européen :
Source :
Fichiers
- http://arxiv.org/pdf/2006.15889
- Accès libre
- Accéder au document
- https://hal.archives-ouvertes.fr/hal-03321544/document
- Accès libre
- Accéder au document
- https://hal.archives-ouvertes.fr/hal-03321544/document
- Accès libre
- Accéder au document
- document
- Accès libre
- Accéder au document
- 2006.15889.pdf
- Accès libre
- Accéder au document
- 2006.15889
- Accès libre
- Accéder au document