Physical study by surface characterizations ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Physical study by surface characterizations of sarin sensor on the basis of chemically functionalized silicon nanoribbon field effect transistor
Author(s) :
Smaali, K. [Auteur]
Centre de Développement des Technologies Avancées [CDTA]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Guérin, David [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Passi, V. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ordronneau, L. [Auteur]
Université Grenoble Alpes [2016-2019] [UGA [2016-2019]]
Carella, A. [Auteur]
Département des Technologies des Nouveaux Matériaux (Ex Département des Technologies des NanoMatériaux) [DTNM ]
Melin, Thierry [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vuillaume, Dominique [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Simonato, J. P. [Auteur]
Département des Technologies des Nouveaux Matériaux (Ex Département des Technologies des NanoMatériaux) [DTNM ]
Lenfant, Stephane [Auteur correspondant]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centre de Développement des Technologies Avancées [CDTA]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Guérin, David [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Passi, V. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ordronneau, L. [Auteur]
Université Grenoble Alpes [2016-2019] [UGA [2016-2019]]
Carella, A. [Auteur]
Département des Technologies des Nouveaux Matériaux (Ex Département des Technologies des NanoMatériaux) [DTNM ]
Melin, Thierry [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vuillaume, Dominique [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Simonato, J. P. [Auteur]
Département des Technologies des Nouveaux Matériaux (Ex Département des Technologies des NanoMatériaux) [DTNM ]
Lenfant, Stephane [Auteur correspondant]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Journal title :
Journal of Physical Chemistry C
Pages :
11180-11191
Publisher :
American Chemical Society
Publication date :
2016
ISSN :
1932-7447
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin probe force microscopy (KPFM) and ...
Show more >Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin probe force microscopy (KPFM) and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and were correlated with changes in the current voltage characteristics of the devices. KPFM measurements on FETs allow us (1) to investigate the contact potential difference (CPD) distribution of the polarized device as a function of the gate voltage and the exposure to OP traces and (2) to analyze the CPD hysteresis associated with the presence of mobile ions on the surface. The CPD measured by KPFM on the silicon nanoribbon was corrected because of side capacitance effects in order to determine the real quantitative surface potential. Comparison with macroscopic Kelvin probe (KP) experiments on larger surfaces was carried out. These two approaches were quantitatively consistent. An important increase of the CPD values (between +399 mV and +302 mV) was observed after the OP sensor grafting, corresponding to a decrease of the work function, and a weaker variation after exposure to OP (between -14 mV and -61 mV) was measured. Molecular imaging by ToF-SIMS revealed OP presence after SiNR-FET exposure. The OP molecules were essentially localized on the Si-NR confirming effectiveness and selectivity of the OP sensor. A prototype was exposed to Sarin vapors and succeeded in the detection of low vapor concentrations (40 ppm).Show less >
Show more >Surface characterizations of an organophosphorus (OP) gas detector based on chemically functionalized silicon nanoribbon field-effect transistor (SiNR-FET) were performed by Kelvin probe force microscopy (KPFM) and time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and were correlated with changes in the current voltage characteristics of the devices. KPFM measurements on FETs allow us (1) to investigate the contact potential difference (CPD) distribution of the polarized device as a function of the gate voltage and the exposure to OP traces and (2) to analyze the CPD hysteresis associated with the presence of mobile ions on the surface. The CPD measured by KPFM on the silicon nanoribbon was corrected because of side capacitance effects in order to determine the real quantitative surface potential. Comparison with macroscopic Kelvin probe (KP) experiments on larger surfaces was carried out. These two approaches were quantitatively consistent. An important increase of the CPD values (between +399 mV and +302 mV) was observed after the OP sensor grafting, corresponding to a decrease of the work function, and a weaker variation after exposure to OP (between -14 mV and -61 mV) was measured. Molecular imaging by ToF-SIMS revealed OP presence after SiNR-FET exposure. The OP molecules were essentially localized on the Si-NR confirming effectiveness and selectivity of the OP sensor. A prototype was exposed to Sarin vapors and succeeded in the detection of low vapor concentrations (40 ppm).Show less >
Language :
Anglais
Popular science :
Non
Source :
Files
- http://arxiv.org/pdf/1605.07137
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-03325001/document
- Open access
- Access the document
- https://hal.archives-ouvertes.fr/hal-03325001/document
- Open access
- Access the document
- document
- Open access
- Access the document
- 1605.07137.pdf
- Open access
- Access the document
- 1605.07137
- Open access
- Access the document