Surface micromachining of chip-edge silicon ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
Surface micromachining of chip-edge silicon microcantilevers using xenon difluoride etching of silicon-on-insulator
Auteur(s) :
Lerond, Thomas [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Yarekha, Dmitri [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Avramovic, Vanessa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Melin, Thierry [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Arscott, Steve [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Yarekha, Dmitri [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Avramovic, Vanessa [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Melin, Thierry [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Arscott, Steve [Auteur]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Titre de la revue :
Journal of Micromechanics and Microengineering
Pagination :
085001
Éditeur :
IOP Publishing
Date de publication :
2021-08
ISSN :
0960-1317
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
We demonstrate a straightforward surface micromachining process for the rapid prototyping of thin 'chip-edge' silicon microcantilevers protruding from the edge of a silicon-on-insulator chip. The process uses a single ...
Lire la suite >We demonstrate a straightforward surface micromachining process for the rapid prototyping of thin 'chip-edge' silicon microcantilevers protruding from the edge of a silicon-on-insulator chip. The process uses a single photolithographic mask-with xenon difluoride used to both pattern the silicon microcantilevers and release them by etching part of the underlying silicon wafer. During the release step, the silicon microcantilevers are protected from the xenon difluoride by a combination of photoresist and buried silicon dioxide. The use of common microfabrication materials (silicon-on-insulator and positive photoresist) and chemicals (buffered hydrofluoric acid and xenon difluoride), along with a maximum process temperature of 100°C, makes for a generic, soft micromachining process which isin principle-compatible with preserving the integrity of any pre-patterned circuitry present on the silicon microcantilever top surface. Doppler vibrometry measurements of the silicon microcantilevers reveal a well-defined resonant frequency and a quality factor comparable with that of similar silicon microcantilevers fabricated using other means. Our enabling technological process allows the rapid prototyping of chip-edge silicon microcantilevers-potentially integrating sensitive circuitry for novel probe technologies-by avoiding the relatively cumbersome, expensive, and potentially circuitdamaging front-to-back processing/deep etching combination.Lire moins >
Lire la suite >We demonstrate a straightforward surface micromachining process for the rapid prototyping of thin 'chip-edge' silicon microcantilevers protruding from the edge of a silicon-on-insulator chip. The process uses a single photolithographic mask-with xenon difluoride used to both pattern the silicon microcantilevers and release them by etching part of the underlying silicon wafer. During the release step, the silicon microcantilevers are protected from the xenon difluoride by a combination of photoresist and buried silicon dioxide. The use of common microfabrication materials (silicon-on-insulator and positive photoresist) and chemicals (buffered hydrofluoric acid and xenon difluoride), along with a maximum process temperature of 100°C, makes for a generic, soft micromachining process which isin principle-compatible with preserving the integrity of any pre-patterned circuitry present on the silicon microcantilever top surface. Doppler vibrometry measurements of the silicon microcantilevers reveal a well-defined resonant frequency and a quality factor comparable with that of similar silicon microcantilevers fabricated using other means. Our enabling technological process allows the rapid prototyping of chip-edge silicon microcantilevers-potentially integrating sensitive circuitry for novel probe technologies-by avoiding the relatively cumbersome, expensive, and potentially circuitdamaging front-to-back processing/deep etching combination.Lire moins >
Langue :
Anglais
Vulgarisation :
Non
Source :
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