Approaching theoretical band gap of ZnSnN2 ...
Type de document :
Article dans une revue scientifique
DOI :
URL permanente :
Titre :
Approaching theoretical band gap of ZnSnN2 films via bias magnetron co-sputtering at room temperature
Auteur(s) :
Virfeu, Agathe [Auteur]
Institut Jean Lamour [IJL]
Alnjiman, Fahad [Auteur]
Institut Jean Lamour [IJL]
Ghanbaja, Jaafar [Auteur]
Institut Jean Lamour [IJL]
Borroto, Alejandro [Auteur]
Institut Jean Lamour [IJL]
Gendarme, Christine [Auteur]
Institut Jean Lamour [IJL]
Migot, Sylvie [Auteur]
Institut Jean Lamour [IJL]
Kopprio, Leonardo [Auteur]
Laboratoire Génie électrique et électronique de Paris [GeePs]
Le Gall, Sylvain [Auteur]
Laboratoire Génie électrique et électronique de Paris [GeePs]
Longeaud, Christophe [Auteur]
Laboratoire Génie électrique et électronique de Paris [GeePs]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pierson, Jean-François [Auteur]
Institut Jean Lamour [IJL]
Institut Jean Lamour [IJL]
Alnjiman, Fahad [Auteur]
Institut Jean Lamour [IJL]
Ghanbaja, Jaafar [Auteur]
Institut Jean Lamour [IJL]
Borroto, Alejandro [Auteur]
Institut Jean Lamour [IJL]
Gendarme, Christine [Auteur]
Institut Jean Lamour [IJL]
Migot, Sylvie [Auteur]
Institut Jean Lamour [IJL]
Kopprio, Leonardo [Auteur]
Laboratoire Génie électrique et électronique de Paris [GeePs]
Le Gall, Sylvain [Auteur]
Laboratoire Génie électrique et électronique de Paris [GeePs]
Longeaud, Christophe [Auteur]
Laboratoire Génie électrique et électronique de Paris [GeePs]
Vilcot, Jean-Pierre [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pierson, Jean-François [Auteur]
Institut Jean Lamour [IJL]
Titre de la revue :
Acs Applied Electronic Materials
Éditeur :
American Chemical Society
Date de publication :
2021-08-20
ISSN :
2637-6113
Mot(s)-clé(s) en anglais :
ZnSnN2
Reactive co-sputtering
bias effect
oxygen content
bandgap energy
Reactive co-sputtering
bias effect
oxygen content
bandgap energy
Discipline(s) HAL :
Sciences de l'ingénieur [physics]/Matériaux
Chimie/Matériaux
Chimie/Matériaux
Résumé en anglais : [en]
Zinc tin nitride (ZnSnN2) is a promising semiconductor candidate for solar cell applications and optoelectronic devices. However, the practical use of this material has been limited by several issues as, among others, ...
Lire la suite >Zinc tin nitride (ZnSnN2) is a promising semiconductor candidate for solar cell applications and optoelectronic devices. However, the practical use of this material has been limited by several issues as, among others, oxygen contamination, a very high concentration of free carriers and the difficulty to reach the theoretically predicted band gap. Here, we deposit thin films of ZnSnN2 by reactive DC magnetron co-sputtering at room temperature with a RF bias power (Pb) in the range of 0-50 W. Using first principle calculations, we explore the structural and opto-electronic properties that are favorably compared to experimental results. We demonstrate that the optical band gap energy can be decreased from 1.7 eV to 1.34 eV, close to the predicted value of 1.37 eV. The free electron concentration is decreased down to 10 17 cm-3 which results in the reduction of the absorption by free electrons in the IR range. In addition, in a given range of applied bias powers, we observe a densification of the films and a significant decrease of their oxygen contamination from 6.7 down to 2.0 at. %. The study underlines that a value of 20 W power bias leads to the optimal structural, optical and electrical properties. Our results provide an interesting method to obtain a potential candidate for photovoltaic applications, in an environmental friendly way, for a low-cost industrialization.Lire moins >
Lire la suite >Zinc tin nitride (ZnSnN2) is a promising semiconductor candidate for solar cell applications and optoelectronic devices. However, the practical use of this material has been limited by several issues as, among others, oxygen contamination, a very high concentration of free carriers and the difficulty to reach the theoretically predicted band gap. Here, we deposit thin films of ZnSnN2 by reactive DC magnetron co-sputtering at room temperature with a RF bias power (Pb) in the range of 0-50 W. Using first principle calculations, we explore the structural and opto-electronic properties that are favorably compared to experimental results. We demonstrate that the optical band gap energy can be decreased from 1.7 eV to 1.34 eV, close to the predicted value of 1.37 eV. The free electron concentration is decreased down to 10 17 cm-3 which results in the reduction of the absorption by free electrons in the IR range. In addition, in a given range of applied bias powers, we observe a densification of the films and a significant decrease of their oxygen contamination from 6.7 down to 2.0 at. %. The study underlines that a value of 20 W power bias leads to the optimal structural, optical and electrical properties. Our results provide an interesting method to obtain a potential candidate for photovoltaic applications, in an environmental friendly way, for a low-cost industrialization.Lire moins >
Langue :
Anglais
Comité de lecture :
Oui
Audience :
Internationale
Vulgarisation :
Non
Source :
Date de dépôt :
2021-11-13T05:16:32Z
Fichiers
- https://hal.univ-lorraine.fr/hal-03367885/document
- Accès libre
- Accéder au document
- https://hal.univ-lorraine.fr/hal-03367885/file/el-2021-004789%20R2%20Revised%20Text.pdf
- Accès libre
- Accéder au document
- https://hal.univ-lorraine.fr/hal-03367885/document
- Accès libre
- Accéder au document
- https://hal.univ-lorraine.fr/hal-03367885/file/el-2021-004789%20R2%20Revised%20Text.pdf
- Accès libre
- Accéder au document