Bias-dependent intrinsic rf thermal noise ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
Bias-dependent intrinsic rf thermal noise modeling and characterization of single-layer graphene fets
Author(s) :
Mavredakis, N. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Pacheco-Sanchez, A. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Sakalas, P. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Wei, W. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur correspondant]
Carbon - IEMN [CARBON - IEMN]
Happy, Henri [Auteur]
Carbon - IEMN [CARBON - IEMN]
Jimenez, D. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Pacheco-Sanchez, A. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Sakalas, P. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Wei, W. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Pallecchi, Emiliano [Auteur correspondant]

Carbon - IEMN [CARBON - IEMN]
Happy, Henri [Auteur]

Carbon - IEMN [CARBON - IEMN]
Jimenez, D. [Auteur]
Universitat Autònoma de Barcelona = Autonomous University of Barcelona = Universidad Autónoma de Barcelona [UAB]
Journal title :
IEEE Transactions on Microwave Theory and Techniques
Pages :
4639-4646
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
2021
ISSN :
0018-9480
English keyword(s) :
Bias dependence
Compact model
Excess noise factor
Graphene transistor (gfet)
Intrinsic channel
Thermal noise
Velocity saturation (vs)
Compact model
Excess noise factor
Graphene transistor (gfet)
Intrinsic channel
Thermal noise
Velocity saturation (vs)
HAL domain(s) :
Sciences de l'ingénieur [physics]/Electronique
English abstract : [en]
In this article, the bias dependence of intrinsic channel thermal noise of single-layer (SL) graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The ...
Show more >In this article, the bias dependence of intrinsic channel thermal noise of single-layer (SL) graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an increase of the specific noise as drain current increases, whereas a saturation trend is observed at very high carrier density regime. Besides, short-channel effects, such as velocity saturation (VS) also result in an increment of noise at higher electric fields. The main goal of this work is to propose a physics-based compact model that accounts for and accurately predicts the above experimental observations in short-channel GFETs. In contrast to long-channel MOSFET-based models adopted previously to describe thermal noise in graphene devices without considering the degenerate nature of graphene, in this work, a model for short-channel GFETs embracing the 2-D material's underlying physics and including a bias dependence is presented. The implemented model is validated with deembedded high-frequency data from two short-channel devices at quasi-static (QS) region of operation. The model precisely describes the experimental data for a wide range of low-to-high drain current values without the need of any fitting parameter. Moreover, the consideration of the degenerate nature of graphene reveals a significant decrease of noise in comparison with the nondegenerate case and the model accurately captures this behavior. This work can also be of utmost significance from the circuit designers' aspect since noise excess factor, a very important figure of merit for RF circuits implementation, is defined and characterized for the first time in graphene transistors. © 1963-2012 IEEE.Show less >
Show more >In this article, the bias dependence of intrinsic channel thermal noise of single-layer (SL) graphene field-effect transistors (GFETs) is thoroughly investigated by experimental observations and compact modeling. The findings indicate an increase of the specific noise as drain current increases, whereas a saturation trend is observed at very high carrier density regime. Besides, short-channel effects, such as velocity saturation (VS) also result in an increment of noise at higher electric fields. The main goal of this work is to propose a physics-based compact model that accounts for and accurately predicts the above experimental observations in short-channel GFETs. In contrast to long-channel MOSFET-based models adopted previously to describe thermal noise in graphene devices without considering the degenerate nature of graphene, in this work, a model for short-channel GFETs embracing the 2-D material's underlying physics and including a bias dependence is presented. The implemented model is validated with deembedded high-frequency data from two short-channel devices at quasi-static (QS) region of operation. The model precisely describes the experimental data for a wide range of low-to-high drain current values without the need of any fitting parameter. Moreover, the consideration of the degenerate nature of graphene reveals a significant decrease of noise in comparison with the nondegenerate case and the model accurately captures this behavior. This work can also be of utmost significance from the circuit designers' aspect since noise excess factor, a very important figure of merit for RF circuits implementation, is defined and characterized for the first time in graphene transistors. © 1963-2012 IEEE.Show less >
Language :
Anglais
Popular science :
Non
European Project :
Source :
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