A cost-effective technology to improve ...
Type de document :
Compte-rendu et recension critique d'ouvrage
DOI :
Titre :
A cost-effective technology to improve power performance of nanoribbons GaN HEMTs
Auteur(s) :
Soltani, Ali [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Puissance - IEMN [PUISSANCE - IEMN]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Benbakhti, Brahim [Auteur]
Liverpool John Moores University [LJMU]
Gerbedoen, J.-C. [Auteur]
Laboratory for Integrated Micro Mechatronics Systems [LIMMS]
Khediri, Abdelkrim [Auteur]
Hassan, Maher, [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Salvestrini, Jean-Paul [Auteur]
Georgia Tech Lorraine [Metz]
Ougazzaden, Abdallah [Auteur]
Georgia Tech Lorraine [Metz]
Bourzgui, Nour-Eddine [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Barkad, Hassan Ali [Auteur]
Université de Djibouti
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Puissance - IEMN [PUISSANCE - IEMN]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Benbakhti, Brahim [Auteur]
Liverpool John Moores University [LJMU]
Gerbedoen, J.-C. [Auteur]
Laboratory for Integrated Micro Mechatronics Systems [LIMMS]
Khediri, Abdelkrim [Auteur]
Hassan, Maher, [Auteur]
Institut Interdisciplinaire d'Innovation Technologique [Sherbrooke] [3IT]
Laboratoire Nanotechnologies et Nanosystèmes [Sherbrooke] [LN2]
Salvestrini, Jean-Paul [Auteur]
Georgia Tech Lorraine [Metz]
Ougazzaden, Abdallah [Auteur]
Georgia Tech Lorraine [Metz]
Bourzgui, Nour-Eddine [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Barkad, Hassan Ali [Auteur]
Université de Djibouti
Titre de la revue :
Applied Physics Letters
Pagination :
042102
Éditeur :
American Institute of Physics
Date de publication :
2022-01-24
ISSN :
0003-6951
Discipline(s) HAL :
Sciences de l'ingénieur [physics]
Résumé en anglais : [en]
A cost-effective fabrication process is developed to improve the power performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs). This process uses nitrogen ion (N+) implantation to form multiple parallel NanoRibbons ...
Lire la suite >A cost-effective fabrication process is developed to improve the power performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs). This process uses nitrogen ion (N+) implantation to form multiple parallel NanoRibbons on AlGaN/GaN heterostructures, with thin buffer layer (AlGaN/GaN NR-HEMTs). SRIM simulations of the N+ implantation combined with measured current-field characteristics reveal a good electrical isolation beneath the 2-dimensional electron gas (2DEG), resulting in substantial increase of the breakdown field of the NRHEMTs, when compared to conventional AlGaN/GaN HEMTs. The fabricated AlGaN/GaN NR-HEMTs performed (i) an ON/OFF current ratio more than two orders of magnitude larger and (ii) a buffer leakage current more than one order of magnitude weaker than that of the conventional AlGaN/GaN HEMTs. The on-resistance, RON, and series resistance, RS, of AlGaN/GaN NR-HEMTs are both reduced by one order of magnitude, when compared to those of the conventional AlGaN/GaN HEMTs. These have boosted the drive current density by up to 435%. Furthermore, we have found that the architecture of the AlGaN/GaN NR-HEMTs reduces the destructive impact of electron traps in the device. An optimized AlGaN/GaN NR-HEMT exhibited a better electrostatic integrity, a subthreshold slope of ∼210 mV/dec instead of 730 mV/dec for a conventional GaN HEMT. A higher linearity in the transconductance, gm, of NR-HEMTs is observed, twice of that of a conventional GaN HEMT. These results demonstrate the great interest of developed process technology, of NR-HEMTs, for high-power switching applicationsLire moins >
Lire la suite >A cost-effective fabrication process is developed to improve the power performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs). This process uses nitrogen ion (N+) implantation to form multiple parallel NanoRibbons on AlGaN/GaN heterostructures, with thin buffer layer (AlGaN/GaN NR-HEMTs). SRIM simulations of the N+ implantation combined with measured current-field characteristics reveal a good electrical isolation beneath the 2-dimensional electron gas (2DEG), resulting in substantial increase of the breakdown field of the NRHEMTs, when compared to conventional AlGaN/GaN HEMTs. The fabricated AlGaN/GaN NR-HEMTs performed (i) an ON/OFF current ratio more than two orders of magnitude larger and (ii) a buffer leakage current more than one order of magnitude weaker than that of the conventional AlGaN/GaN HEMTs. The on-resistance, RON, and series resistance, RS, of AlGaN/GaN NR-HEMTs are both reduced by one order of magnitude, when compared to those of the conventional AlGaN/GaN HEMTs. These have boosted the drive current density by up to 435%. Furthermore, we have found that the architecture of the AlGaN/GaN NR-HEMTs reduces the destructive impact of electron traps in the device. An optimized AlGaN/GaN NR-HEMT exhibited a better electrostatic integrity, a subthreshold slope of ∼210 mV/dec instead of 730 mV/dec for a conventional GaN HEMT. A higher linearity in the transconductance, gm, of NR-HEMTs is observed, twice of that of a conventional GaN HEMT. These results demonstrate the great interest of developed process technology, of NR-HEMTs, for high-power switching applicationsLire moins >
Langue :
Anglais
Vulgarisation :
Non
Projet ANR :
Source :
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