Microscopy of Semiconducting Materials 2003

Kątcki, J; Ratajczak, J; Laszcz, A; Phillipp, F; Dubois, Emmanuel; Larrieu, G; Penaud, J; Baie, X

Document type :

Ouvrage (y compris édition critique et traduction)

DOI :

10.1201/9781351074636

Title :

Microscopy of Semiconducting Materials 2003

Author(s) :

Kątcki, J [Auteur]
Ratajczak, J [Auteur]
Laszcz, A [Auteur]
Phillipp, F [Auteur]
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Larrieu, G [Auteur]
Penaud, J [Auteur]
Baie, X [Auteur]

Publisher :

CRC Press

Publication date :

2018-01-10

Number of pages :

4 pages

ISBN :

9781351074636

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction ...
Show more >In Accumulated Low Schottky Barrier metal oxide semiconductor field effect transistors (MOSFET) on SOl structures, very thin silicide layers are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of metal with semiconductor. In order to get a broad vision of the most interesting metal/silicide solution several material stacks were evaluated including platinum and iridium. In this work cross-sectional transmission electron microscopy was used to study the process of silicide formation in metal/Si and metal/SiGe/Si structures. Novel structure architectures have been developed. They are mainly based on the use of a very thin film SOl substrate with typical active silicon layer thicknesses ranging between 2 and 20 nm for 10-40 nm gate length MOSFETs. In Accumulation LowSchottky Barrier -SOI MOSFET structures very thin silicides are used for ohmic contacts. Silicide contacts form due to metallurgical reaction of metal with semiconductor.Show less >

Language :

Anglais

Audience :

Internationale

Popular science :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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