Titre :

Enhancement of thermoelectric power factor in NaxCoO2/Au multilayers

Auteur(s) :

Zhao, Xiaohui [Auteur]
Wang, Haifeng [Auteur]
Wang, Shufang [Auteur]
Dogheche, El Hadj [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Wang, Jianglong [Auteur]
Fu, Guangsheng [Auteur]

Titre de la revue :

Rsc advances

Pagination :

57148-57152

Éditeur :

Royal Society of Chemistry

Date de publication :

2014

ISSN :

2046-2069

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Optique / photonique
Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]

Résumé en anglais : [en]

NaxCoO2/Au thin film multilayers, with a thickness of the Au layer of 0.5–12 nm, have been fabricated on c-Al2O3 by post annealing of the CoO/Au thin film multilayers in Na vapor at high temperature in air. X-ray diffraction ...
Lire la suite >NaxCoO2/Au thin film multilayers, with a thickness of the Au layer of 0.5–12 nm, have been fabricated on c-Al2O3 by post annealing of the CoO/Au thin film multilayers in Na vapor at high temperature in air. X-ray diffraction measurements revealed that the resulting NaxCoO2 layer was c-axis oriented with perfect ab-plane alignment and there was no reaction between Au and NaxCoO2. The resistivity of the NaxCoO2/Au multilayers decreased significantly with increasing the volume fraction of the Au layer without obvious deterioration of the Seebeck coefficient. Consequently, a considerable enhancement of the power factor was achieved in NaxCoO2/Au multilayers with the right Au volume fraction, which was about 2.2 times larger than that of the single NaxCoO2 layer with the same thickness.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL