[Invited]  AlGaN Channel HEMTs for High Voltage Applications

Medjdoub, Farid; Mehta, Jash Rinku; Abid, Idriss; Cordier, Yvon; Semond, Fabrice

Document type :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes: Conférence invitée

Title :

[Invited] AlGaN Channel HEMTs for High Voltage Applications

Author(s) :

Medjdoub, Farid [Auteur]

WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Mehta, Jash Rinku [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Abid, Idriss [Auteur]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Semond, Fabrice [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]

Conference title :

MRS Spring Meeting & Exhibit

Conference organizers(s) :

MRS 2022 spring meeting

City :

Honolulu (Online)

Country :

Etats-Unis d'Amérique

Start date of the conference :

2022-05-23

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. Devices and circuits based on these emerging materials are more suited to operate at higher ...
Show more >GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. Devices and circuits based on these emerging materials are more suited to operate at higher voltages and temperatures than Si-based devices owing to their superior physical properties. Recently, AlGaN/GaN based high electron mobility transistors (HEMTs) on low cost silicon substrate have been extensively demonstrated as attractive candidates for next generation power devices in the 100-650V range with low on-resistances. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits and address new requirements of high voltage power devices. In this presentation, we will discuss various device designs and preliminary results already showing the advantages and benefits of these new material systems for high voltage applications.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

Réseau national sur GaN

Comment :

Symposium EQ01 - Ultra-Wide Bandgap Materials and Devices, EQ01.14

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

[Invited] AlGaN Channel HEMTs for High ... BibTeX CSV Excel RIS

[Invited] AlGaN Channel HEMTs for High ...

BibTeX

CSV

Excel

RIS