Toward nanocrystal-based active nanophotonic devices

Dang Huu, Tung; Vasanelli, Angela; Todorov, Yanko; Sirtori, Carlo; Prado, Yoann; Delerue, Christophe; Lhuillier, Emmanuel

Document type :

Communication dans un congrès avec actes

DOI :

10.29363/nanoge.nsm.2022.029

Title :

Toward nanocrystal-based active nanophotonic devices

Author(s) :

Dang Huu, Tung [Auteur]
Laboratoire de Physique Théorique de l'ENS [École Normale Supérieure] [LPTENS]
Vasanelli, Angela [Auteur]
Laboratoire de Physique Théorique de l'ENS [École Normale Supérieure] [LPTENS]
Todorov, Yanko [Auteur]
Laboratoire de Physique Théorique de l'ENS [École Normale Supérieure] [LPTENS]
Sirtori, Carlo [Auteur]
Laboratoire de Physique Théorique de l'ENS [École Normale Supérieure] [LPTENS]
Prado, Yoann [Auteur]
Nanostructures et optique [INSP-E4]
Delerue, Christophe [Auteur]
Physique - IEMN [PHYSIQUE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lhuillier, Emmanuel [Auteur]
Physico-chimie et dynamique des surfaces [INSP-E6]

Conference title :

nanoGe Spring Meeting 2022

City :

Online

Country :

Espagne

Start date of the conference :

2022-03-07

Publisher :

Fundació Scito

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Optical properties tunability is one of the essential characteristics of nanocrystals (NCs). Nonetheless, obtaining reconfigurable spectral response in NC-based optoelectronic devices remains a hardly explored domain. This ...
Show more >Optical properties tunability is one of the essential characteristics of nanocrystals (NCs). Nonetheless, obtaining reconfigurable spectral response in NC-based optoelectronic devices remains a hardly explored domain. This is because the conventional strategies, such as exploiting Stark effect or integrating NCs into MEMS structures, are not straightforward to apply for NC-based devices due to high electrostatic field requirement and fabrication incompatibility. Here, we demonstrate optical tunability with bias in a device coupling HgTe1 NCs with a plasmonic structure. Bias tunability can be obtained thanks to the interplay between absorption inhomogeneity due to the plasmonic cavity2 and the NC hopping transport. As a result, 15 meV blueshift can be observed under the application of 3 V bias voltage for a device working in the extended short-wave infrared3. We show that hopping transport, which is usually seen as a limitation of NCs, can be combined with inhomogeneous absorption to obtain an active photonic NC-based device.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Comment :

Contributed talk, presentation 029

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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