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Photonics-Based Projects at IEMN
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Document type :
Partie d'ouvrage
DOI :
10.1007/978-3-030-73738-2_47
Title :
Photonics-Based Projects at IEMN
Author(s) :
Ducournau, Guillaume [Auteur correspondant] refId
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lampin, Jean-Francois [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Zaknoune, Mohammed [Auteur] refId
Advanced NanOmeter DEvices - IEMN [ANODE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Book title :
THz Communications
Publisher :
Springer International Publishing
Publication place :
Cham
Publication date :
2022-12-08
English keyword(s) :
Photonic techniques
Uni-travelling carrier photodiodes
System-level THz links
HAL domain(s) :
Sciences de l'ingénieur [physics]
English abstract : [en]
The photonic technologies have enabled the generation of THz with the photomixing technique, which is essentially a down-conversion from optical domain to the THz. Working in pulse-mode or in continuous-wave, this approach ...
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The photonic technologies have enabled the generation of THz with the photomixing technique, which is essentially a down-conversion from optical domain to the THz. Working in pulse-mode or in continuous-wave, this approach relies on an efficient optical to THz converter. Such device can be a photoconductor or an ultra-fast photodiode. At 1.55 μm, the uni-travelling carrier photodiode (UTC-PD) has been proven to be efficient and scalable to reach the THz frequencies. We report here some examples of THz communication systems enabled by InGaAs/InP UTC-emitter, in the range 200–600 GHz. Among them, first-generation (2010–2015) passive THz hotspots based on bias-free UTC-PD at 200 GHz, broadband transmission at 400 GHz and first tests conducted in the 600 GHz band are described. The second generation (2016–2020) used a high-efficiency UTC-PD for 100 Gbit/s in the 300 GHz band leveraging on GaAs technology in the receiver part.Show less >
Language :
Anglais
Audience :
Internationale
Popular science :
Non
Collections :
  • Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520
Source :
Harvested from HAL
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