Title :

Active Ultrahigh‐Q (0.2×10^6) THz Topological Cavities on a Chip

Author(s) :

Kumar, Abhishek [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Thérapies Laser Assistées par l'Image pour l'Oncologie - U 1189 [ONCO-THAI]
Gupta, Manoj [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Pitchappa, Prakash [Auteur]
Agency for science, technology and research [Singapore] [A*STAR]
Tan, Thomas Caiwei [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Chattopadhyay, Udvas [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Ducournau, Guillaume [Auteur]
Photonique THz - IEMN [PHOTONIQUE THZ - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wang, Nan [Auteur]
Agency for science, technology and research [Singapore] [A*STAR]
Chong, Yidong [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]
Nanyang Technological University [Singapour]
Singh, Ranjan [Auteur]
Division of Physics and Applied Physics [Nanyang Technological University] [SPMS-PAP-02-01]

Journal title :

Advanced Materials

Pages :

2202370

Publisher :

Wiley-VCH Verlag

Publication date :

2022-05-14

ISSN :

0935-9648

English keyword(s) :

6G communication
THz photonics
THz topological integrated circuits (TTICs)
on-chip modulators
quantum and topological photonics
ultrahigh-Q cavities.

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer ...
Show more >Rapid scaling of semiconductor devices has led to an increase in the number of processor cores and integrated functionalities onto a single chip to support the growing demands of high-speed and large-volume consumer electronics. To meet this burgeoning demand, an improved interconnect capacity in terms of bandwidth density and active tunability is required for enhanced throughput and energy efficiency. Low-loss terahertz silicon interconnects with larger bandwidth offer a solution for the existing inter-/intrachip bandwidth density and energy-efficiency bottleneck. Here, a low-loss terahertz topological interconnect–cavity system is presented that can actively route signals through sharp bends, by critically coupling to a topological cavity with an ultrahigh-quality (Q) factor of 0.2 × 106. The topologically protected large Q factor cavity enables energy-efficient optical control showing 60 dB modulation. Dynamic control is further demonstrated of the critical coupling between the topological interconnect–cavity for on-chip active tailoring of the cavity resonance linewidth, frequency, and modulation through complete suppression of the back reflection. The silicon topological cavity is complementary metal–oxide–semiconductor (CMOS)-compatible and highly desirable for hybrid electronic–photonic technologies for sixth (6G) generation terahertz communication devices. Ultrahigh-Q cavity also paves the path for designing ultrasensitive topological sensors, terahertz topological integrated circuits, and nonlinear topological photonic devices.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL