AlGaN Channel HEMTs for High Voltage Applications

Medjdoub, Farid; Mehta, Jash; Abid, Idriss; Cordier, Yvon; Semond, Fabrice

[Invited]

Document type :

Autre communication scientifique (congrès sans actes - poster - séminaire...): Communication dans un congrès avec actes: Conférence invitée

Permalink :

http://hdl.handle.net/20.500.12210/74659

Title :

AlGaN Channel HEMTs for High Voltage Applications
[Invited]

Author(s) :

Medjdoub, Farid [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Mehta, Jash [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Abid, Idriss [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
WIde baNd gap materials and Devices - IEMN [WIND - IEMN]
Cordier, Yvon [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]
Semond, Fabrice [Auteur]
Centre de recherche sur l'hétéroepitaxie et ses applications [CRHEA]

Conference title :

2022 MRS Spring Meeting & Exhibit

City :

Honolulu

Country :

Etats-Unis d'Amérique

Start date of the conference :

2022-05-23

English keyword(s) :

COMPOUND
ELECTRONIC MATERIAL

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. Devices and circuits based on these emerging materials are more suited to operate at higher ...
Show more >GaN high electron mobility transistors (HEMT) are becoming the mainstream for high frequency and power switching applications. Devices and circuits based on these emerging materials are more suited to operate at higher voltages and temperatures than Si-based devices owing to their superior physical properties. Recently, AlGaN/GaN based high electron mobility transistors (HEMTs) on low cost silicon substrate have been extensively demonstrated as attractive candidates for next generation power devices in the 100-650V range with low on-resistances. On the other hand, Ultra-Wide Band Gap (UWBG) materials such as AlN that has a bandgap of 6.2 eV are attracting attention for pushing the limits and address new requirements of high voltage power devices. In this presentation, we will discuss various device designs and preliminary results already showing the advantages and benefits of these new material systems for high voltage applications.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Comment :

Invited presentation

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2022-06-01T04:24:23Z