Title :

Doping of poly(3-hexylthiophene) nanofibers: microscopic morphology and electrical properties

Author(s) :

Desbief, S. [Auteur correspondant]
Derue, G. [Auteur]
Leclère, Ph. [Auteur]
Lenfant, Stephane [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Vuillaume, D. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Lazzaroni, R. [Auteur]

Journal title :

European Physical Journal: Applied Physics

Pages :

1-5

Publisher :

EDP Sciences

Publication date :

2009-03-10

ISSN :

1286-0042

English keyword(s) :

Physical Sciences

English abstract : [en]

The microstructure of thin deposits of poly(3-hexylthiophene) on silicon surfaces is investigated as a function of the solution concentration, the maturation time and the solvent nature, with the aim of generating one ...
Show more >The microstructure of thin deposits of poly(3-hexylthiophene) on silicon surfaces is investigated as a function of the solution concentration, the maturation time and the solvent nature, with the aim of generating one monolayer of P3HT nanofibers on the surface. These films are then exposed to a NOPF solution, in order to oxidize the conjugated system and to produce conducting nanostructures. The effect of the chemical doping on the microscopic morphology and the electrical properties is analyzed on the basis of AFM and I-V measurements.Show less >

Language :

Anglais

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL