Title :

Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs

Author(s) :

Alim, Mohammad Abdul [Auteur]
Rezazadeh, Ali A [Auteur]
University of Manchester [Manchester]
Gaquière, Christophe [Auteur]
Puissance - IEMN [PUISSANCE - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Conference title :

2022 International Conference on Innovations in Science, Engineering and Technology (ICISET)

City :

Chittagong

Country :

Bangladesh

Start date of the conference :

2022-02-26

Book title :

Noise Figure Modeling Subject to Frequency and Temperature for AlGaN/GaN HEMTs

Publisher :

IEEE

HAL domain(s) :

Sciences de l'ingénieur [physics]

English abstract : [en]

The microwave noise Figure modelling for AlGaN/GaN HEMTs is shown in this study over a large range of temperatures e.g., -40 to 150°C. Standard noise parameters for example minimum noise Figure NFmin), normalized noise ...
Show more >The microwave noise Figure modelling for AlGaN/GaN HEMTs is shown in this study over a large range of temperatures e.g., -40 to 150°C. Standard noise parameters for example minimum noise Figure NFmin), normalized noise equivalent resistance Rs, and association gain Ga were modelled at various frequencies and temperatures. The temperature coefficients of noise-related equivalent circuit parameters (ECPs) were also determined. The noise parameters of GaN on SiC based HEMTs are considered to be analogous to GaN HEMTs on Si, sapphire, and diamond substrates, as well as InP- and GaAs HEMTs. According to the findings, GaN/SiC HEMTs offer a lot of potential for applications requiring LNAs at high temperatures.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL