Title :

Facile growth of density- and diameter-controlled GaN nanobridges and their photodetector application

Author(s) :

Kang, Jin-Ho [Auteur]
Yale University [New Haven]
Chonnam National University [Gwangju]
Johar, Muhammad Ali [Auteur]
Chonnam National University [Gwangju]
Alshehri, Bandar [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dogheche, El Hadj [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - Département Opto-Acousto-Électronique - UMR 8520 [IEMN-DOAE]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Ryu, Sang-Wan [Auteur]
Chonnam National University [Gwangju]

Journal title :

Journal of Materials Chemistry C

Pages :

11879-11884

Publisher :

Royal Society of Chemistry

Publication date :

2017-12-07

ISSN :

2050-7526

HAL domain(s) :

Sciences de l'ingénieur [physics]/Acoustique [physics.class-ph]
Sciences de l'ingénieur [physics]/Optique / photonique

English abstract : [en]

The growth of arrayed GaN nanobridges (NBs) and their application in a photodetector (PD) were studied. First, GaN nanowires (NWs) were selectively grown on the sidewalls of a GaN mesa using an Au catalyst-assisted ...
Show more >The growth of arrayed GaN nanobridges (NBs) and their application in a photodetector (PD) were studied. First, GaN nanowires (NWs) were selectively grown on the sidewalls of a GaN mesa using an Au catalyst-assisted vapor–liquid–solid (VLS) method, while their density was conveniently controlled by varying the dilution of the Au nanoparticle colloidal solution. It was revealed that an m-axis NW was preferentially fabricated on both the m-plane and a-plane sidewalls. A two-step VLS–VS growth technique was utilized for the radial core–shell structure composed of GaN, InGaN and InGaN/GaN multi-quantum wells (MQWs) that allowed independent control of the NW diameter. Finally, core–shell NBs were fabricated across a trench formed between two GaN mesas to be used as a light absorbing medium in a photoconductor. Their optical response was measured at various wavelengths and InGaN/GaN MQWs embedded in the core–shell structure exhibited an enhanced photoresponse to visible light.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Comment :

[JIF=5.976]

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL