Title :

Molecular beam epitaxial growth of multilayer 2D-boron nitride on Ni substrates from borazine and plasma-activated nitrogen

Author(s) :

Hadid, Jawad [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Colambo, Ivy [Auteur]
University of the Philippines Los Baños [UP Los Baños]
Avila, Jose [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Plaud, Aexandre [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Université Paris Saclay, ONERA, CNRS, Laboratoire d'étude des microstructures (LEM)
Boyaval, Christophe [Auteur]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Deresmes, D. [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Nuns, Nicolas [Auteur]
Institut Michel Eugène Chevreul - FR 2638 [IMEC]
Institut des Molécules et de la Matière Condensée de Lille [IMMCL]
Dudin, Pavel [Auteur]
Synchrotron SOLEIL [SSOLEIL]
Loiseau, Annick [Auteur]
Université Paris Saclay, ONERA, CNRS, Laboratoire d'étude des microstructures (LEM)
Barjon, Julien [Auteur]
Groupe d'Etude de la Matière Condensée [GEMAC]
Wallart, Xavier [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Vignaud, Dominique [Auteur]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]

Journal title :

Nanotechnology

Pages :

035601

Publisher :

Institute of Physics

Publication date :

2022

ISSN :

0957-4484

HAL domain(s) :

Sciences de l'ingénieur [physics]/Matériaux
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess ...
Show more >2D boron nitride (2D-BN) was synthesized by gas-source molecular beam epitaxy on polycrystalline and monocrystalline Ni substrates using gaseous borazine and active nitrogen generated by a remote plasma source. The excess of nitrogen atoms allows to overcome the thickness self-limitation active on Ni when using borazine alone. The nucleation density and the shape of the 2D-BN domains are clearly related to the Ni substrate preparation and to the growth parameters. Based on spatially-resolved photoemission spectroscopy and on the detection of the π plasmon peak, we discuss the origin of the N1s and B1s components and their relationship with an electronic coupling at the interface. After optimization of the growth parameters, a full 2D-BN coverage is obtained, although the material thickness is not evenly distributed. The 2D-BN presents a granular structure on (111) oriented Ni grains, showing a rather poor cristallographic quality. On the contrary, high quality 2D-BN is found on (101) and (001) Ni grains, where triangular islands are observed whose lateral size is limited to ~20 µm.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

ANR Project :

hBN/Graphene 2D Heterostructures: from scalable growth to integration

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL