SiGe quantum wells implementation in Si ...
Document type :
Compte-rendu et recension critique d'ouvrage
Title :
SiGe quantum wells implementation in Si based nanowires for solar cells applications
Author(s) :
Safi, M. [Auteur]
Faculté De Technologie Blida1
Aissat, A. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Faculté De Technologie Blida1
Guesmi, H. [Auteur]
Faculté De Technologie Blida1
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Faculté De Technologie Blida1
Aissat, A. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Faculté De Technologie Blida1
Guesmi, H. [Auteur]
Faculté De Technologie Blida1
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]
Journal title :
Digest Journal of Nanomaterials and Biostructures
Pages :
327-342
Publisher :
Forum of Chalcogeniders
Publication date :
2023
ISSN :
1842-3582
English keyword(s) :
Nanowire
Quantum wells
Solar cells
Quantum efficiency
Quantum wells
Solar cells
Quantum efficiency
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Optique / photonique
Sciences de l'ingénieur [physics]/Optique / photonique
English abstract : [en]
This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and ...
Show more >This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.Show less >
Show more >This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.Show less >
Language :
Anglais
Popular science :
Non
Source :
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