Title :

SiGe quantum wells implementation in Si based nanowires for solar cells applications

Author(s) :

Safi, M. [Auteur]
Faculté De Technologie Blida1
Aissat, A. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Faculté De Technologie Blida1
Guesmi, H. [Auteur]
Faculté De Technologie Blida1
Vilcot, Jean-Pierre [Auteur]
Optoélectronique - IEMN [OPTO - IEMN]

Journal title :

Digest Journal of Nanomaterials and Biostructures

Pages :

327-342

Publisher :

Forum of Chalcogeniders

Publication date :

2023

ISSN :

1842-3582

English keyword(s) :

Nanowire
Quantum wells
Solar cells
Quantum efficiency

HAL domain(s) :

Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
Sciences de l'ingénieur [physics]/Optique / photonique

English abstract : [en]

This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and ...
Show more >This study focuses on modelling and optimizing a new Si nanowire solar cell containing a SiGe/Si quantum well. Quantum efficiency measurements show that the proposed structure has a higher energy absorption advantage and stronger than that of a solar cell based on a standard Si p-i-n nanowire. As a result, the insertion of 14 layers of SiGe/Si quantum well improved the short circuit current density and the efficiency by a factor of about 1.24 and 1.37, respectively. The best concentration and radius values obtained are x = 0.05 and r = 0.190 µm, respectively, with a strain of less than 1%.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2023-05-08T20:17:00Z