Title :

Relation between thermal quenching of photoluminescence and negative capacitance on InGaN/GaN multiple quantum wells in p-i-n structure

Author(s) :

Özdemir, Orhan [Auteur]
Yildiz Technical University [YTU]
Baş, Hanife [Auteur]
Yildiz Technical University [YTU]
Ayarcı Kuruoğlu, Neslihan [Auteur]
Yildiz Technical University [YTU]
Bozkurt, Kutsal [Auteur]
Aydın, Mustafa [Auteur]
Istanbul University
Sarcan, Fahrettin [Auteur]
Istanbul University
Erol, Ayşe [Auteur]
Istanbul University
Alshehri, Bandar [Auteur]
Dogheche, Karim [Auteur]
Université Polytechnique Hauts-de-France [UPHF]
Optoélectronique - IEMN [OPTO - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Dogheche, El Hadj [Auteur]
Université Polytechnique Hauts-de-France [UPHF]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Optoélectronique - IEMN [OPTO - IEMN]

Journal title :

Journal of Luminescence

Pages :

119749

Publisher :

Elsevier

Publication date :

2023-05

ISSN :

0022-2313

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

Temperature-dependent photoluminescence (PL) and surface photovoltage (SPV) measurements were carried out to detect radiative and non-radiative transitions on InGaN/GaN quantum well (QW) blue light-emitting device (LED). ...
Show more >Temperature-dependent photoluminescence (PL) and surface photovoltage (SPV) measurements were carried out to detect radiative and non-radiative transitions on InGaN/GaN quantum well (QW) blue light-emitting device (LED). The emissions, peaking at 3.03 eV and 2.89 eV, were present in both PL and SPV spectrum and shifted with the temperature in a decrease-increase-decrease manner; the so-called S-shaped behavior between 30-150 K. Remarkably, the shift continued with an increase in energy (blue shift) and finally saturated for a temperature above 150 K. The first variation below 150 K was explained by the composition fluctuation of In atom in the InGaN MQW layer. In contrast, the second significant shift in peak energy was caused to the localization effect, around 60 meV. The degree of localized (σ) value agreed with the activation energy of thermal quenching of PL intensity. A strong localization effect was also attributed to the sub-bandgap trap level in the quantum well and originated negative capacitance in admittance spectroscopy measurement.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

Submission date :

2023-05-08T21:38:42Z