Title :

Nanomechanical damping via electron-assisted relaxation of two-level systems

Author(s) :

Maillet, Olivier [Auteur]
Groupe Nano-Electronique [GNE]
Service de physique de l'état condensé [SPEC - UMR3680]
CEA- Saclay [CEA]
Aalto University
Cattiaux, Dylan [Auteur]
Ultra-basses températures [NEEL - UBT]
Zhou, Xin [Auteur]
Laboratoire International associé sur les phénomènes Critiques et Supercritiques en électronique fonctionnelle, acoustique et fluidique [LIA LICS/LEMAC]
Nano and Microsystems - IEMN [NAM6 - IEMN]
Gazizulin, Rasul R. [Auteur]
Ultra-basses températures [NEEL - UBT]
Bourgeois, Olivier [Auteur]
Thermodynamique et biophysique des petits systèmes [NEEL - TPS]
Fefferman, Andrew D. [Auteur]
Ultra-basses températures [NEEL - UBT]
Collin, Eddy [Auteur]
Ultra-basses températures [NEEL - UBT]

Journal title :

Physical Review B

Pages :

064104

Publisher :

American Physical Society

Publication date :

2023

ISSN :

2469-9950

HAL domain(s) :

Physique [physics]/Mécanique [physics]
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique

English abstract : [en]

We report on measurements of dissipation and frequency noise at millikelvin temperatures of nanomechanical devices covered with aluminum. A clear excess damping is observed after switching the metallic layer from superconducting ...
Show more >We report on measurements of dissipation and frequency noise at millikelvin temperatures of nanomechanical devices covered with aluminum. A clear excess damping is observed after switching the metallic layer from superconducting to the normal state with a magnetic field. Beyond the standard model of internal tunneling systems coupled to the phonon bath, here we consider the relaxation to the conduction electrons together with the nature of the mechanical dispersion laws for stressed/unstressed devices. With these key ingredients, a model describing the relaxation of two-level systems inside the structure due to interactions with electrons and phonons with well separated timescales captures the data. In addition, we measure an excess 1/f-type frequency noise in the normal state, which further emphasizes the impact of conduction electrons.Show less >

Language :

Anglais

Peer reviewed article :

Oui

Audience :

Internationale

Popular science :

Non

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL