Field and Thermal Emission Limited Charge ...
Document type :
Compte-rendu et recension critique d'ouvrage
DOI :
Title :
Field and Thermal Emission Limited Charge Injection in Au–C60–Graphene van der Waals Vertical Heterostructures for Organic Electronics
Author(s) :
Oswald, Jacopo [Auteur]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Beretta, Davide [Auteur]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Stiefel, Michael [Auteur]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Furrer, Roman [Auteur]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Lohde, Sebastian [Auteur]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Vuillaume, Dominique [Auteur]
Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Calame, Michel [Auteur]
Université de Bâle = University of Basel = Basel Universität [Unibas]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Beretta, Davide [Auteur]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Stiefel, Michael [Auteur]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Furrer, Roman [Auteur]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Lohde, Sebastian [Auteur]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Vuillaume, Dominique [Auteur]

Nanostructures, nanoComponents & Molecules - IEMN [NCM - IEMN]
Calame, Michel [Auteur]
Université de Bâle = University of Basel = Basel Universität [Unibas]
Swiss Federal Laboratories for Materials Science and Technology [Dübendorf] [EMPA]
Journal title :
Acs Applied Nano Materials
Publisher :
American Chemical Society
Publication date :
2023-05-22
ISSN :
2574-0970
English keyword(s) :
organic semiconductor
graphene
interface
transport vertical
van der Waals
C60
graphene
interface
transport vertical
van der Waals
C60
HAL domain(s) :
Sciences de l'ingénieur [physics]/Micro et nanotechnologies/Microélectronique
English abstract : [en]
Among the family of 2D materials, graphene is the ideal candidate as top or interlayer electrode for hybrid van der Waals heterostructures made of organic thin films and 2D materials due to its high conductivity and mobility ...
Show more >Among the family of 2D materials, graphene is the ideal candidate as top or interlayer electrode for hybrid van der Waals heterostructures made of organic thin films and 2D materials due to its high conductivity and mobility and its inherent ability of forming neat interfaces without diffusing in the adjacent organic layer. Understanding the charge injection mechanism at graphene/organic semiconductor interfaces is therefore crucial to develop organic electronic devices. In particular, Gr/C60 interfaces are promising building blocks for future n-type vertical organic transistors exploiting graphene as tunneling base electrode in a two back-to-back Gr/C60 Schottky diode configuration. This work delves into the charge transport mechanism across Au/C60/Gr vertical heterostructures fabricated on Si/SiO2 using a combination of techniques commonly used in the semiconductor industry, where a resist-free CVD graphene layer functions as a top electrode. Temperature-dependent electrical measurements show that the transport mechanism is injection limited and occurs via Fowler–Nordheim tunneling at low temperature, while it is dominated by a nonideal thermionic emission at room and high temperatures, with energy barriers at room temperature of ca. 0.58 and 0.65 eV at the Gr/C60 and Au/C60 interfaces, respectively. Impedance spectroscopy confirms that the organic semiconductor is depleted, and the energy band diagram results in two electron blocking interfaces. The resulting rectifying nature of the Gr/C60 interface could be exploited in organic hot electron transistors and vertical organic permeable-base transistors.Show less >
Show more >Among the family of 2D materials, graphene is the ideal candidate as top or interlayer electrode for hybrid van der Waals heterostructures made of organic thin films and 2D materials due to its high conductivity and mobility and its inherent ability of forming neat interfaces without diffusing in the adjacent organic layer. Understanding the charge injection mechanism at graphene/organic semiconductor interfaces is therefore crucial to develop organic electronic devices. In particular, Gr/C60 interfaces are promising building blocks for future n-type vertical organic transistors exploiting graphene as tunneling base electrode in a two back-to-back Gr/C60 Schottky diode configuration. This work delves into the charge transport mechanism across Au/C60/Gr vertical heterostructures fabricated on Si/SiO2 using a combination of techniques commonly used in the semiconductor industry, where a resist-free CVD graphene layer functions as a top electrode. Temperature-dependent electrical measurements show that the transport mechanism is injection limited and occurs via Fowler–Nordheim tunneling at low temperature, while it is dominated by a nonideal thermionic emission at room and high temperatures, with energy barriers at room temperature of ca. 0.58 and 0.65 eV at the Gr/C60 and Au/C60 interfaces, respectively. Impedance spectroscopy confirms that the organic semiconductor is depleted, and the energy band diagram results in two electron blocking interfaces. The resulting rectifying nature of the Gr/C60 interface could be exploited in organic hot electron transistors and vertical organic permeable-base transistors.Show less >
Language :
Anglais
Popular science :
Non
ANR Project :
Source :
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