Title :

Two dimensional boron nitride growth on nickel foils by plasma assisted molecular beam epitaxy from elemental B and N sources

Author(s) :

Batista-Pessoa, Walter [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Wallart, Xavier [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Vignaud, Dominique [Auteur correspondant]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]

Journal title :

Nanotechnology

Pages :

415601

Publisher :

Institute of Physics

Publication date :

2023-07-24

ISSN :

0957-4484

HAL domain(s) :

Physique [physics]
Sciences de l'ingénieur [physics]

English abstract : [en]

The growth of two dimensional sp 2 -bonded boron nitride (2D-BN) was studied in a plasma-assisted molecular beam epitaxy set-up, using independent boron and nitrogen sources. We studied the growth conditions on polycrystalline ...
Show more >The growth of two dimensional sp 2 -bonded boron nitride (2D-BN) was studied in a plasma-assisted molecular beam epitaxy set-up, using independent boron and nitrogen sources. We studied the growth conditions on polycrystalline Ni foils: B and N respective fluxes, growth temperature and time, which are influencing the surface morphology, stoichiometry and the 2D-BN domain size. Using a B/N precursor flux ratio ≫1 yields films with incorporated boron largely in excess and intermixed with 2D-BN. On the contrary, precursor flux ratios from moderately B-rich to moderately N-rich leads to stoichiometric 2D-BN. The optimum growth temperature is found to be 900 °C, a temperature for which the crystallographic quality is improved compared to lower temperatures thanks to the increased adatom surface mobility although a partial sublimation of BN occurs. Increasing the growth time under the optimized settings shows that the growth does not occur in a layer-by-layer mode, but rather by stacking BN domains on top of each other with a rather slow lateral extension of the domains.Show less >

Language :

Anglais

Popular science :

Non

ANR Project :

hBN/Graphene 2D Heterostructures: from scalable growth to integration

Collections :

• Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL