A study of the electrical performances of ...
Document type :
Article dans une revue scientifique: Article original
DOI :
Title :
A study of the electrical performances of isolation structures
Author(s) :
Dubois, Emmanuel [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Coppee, J.-L. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Baccus, B. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Collard, D. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]

Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Coppee, J.-L. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Baccus, B. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Collard, D. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Journal title :
IEEE Transactions on Electron Devices
Pages :
1477-1486
Publisher :
Institute of Electrical and Electronics Engineers
Publication date :
1990
ISSN :
0018-9383
HAL domain(s) :
Sciences de l'ingénieur [physics]/Electronique
English abstract : [en]
The electrical properties of field oxide isolation structures are investigated from the device physics point of view. The importance of the potential barrier formation mechanism is clearly demonstrated through the derivation ...
Show more >The electrical properties of field oxide isolation structures are investigated from the device physics point of view. The importance of the potential barrier formation mechanism is clearly demonstrated through the derivation of an analytical formulation of the subthreshold current. The current independence on the isolation device length is clearly established. A large range of ideal field oxide geometries is systematically characterized to demonstrate the effect of two key parameters: the amount of buried oxide and the bird's-beak slope. The predicted isolation performances are verified on semirecessed and fully recessed structures by means of process/device simulations and experimental data. Good agreement is found between measured and calculated subthreshold currents.Show less >
Show more >The electrical properties of field oxide isolation structures are investigated from the device physics point of view. The importance of the potential barrier formation mechanism is clearly demonstrated through the derivation of an analytical formulation of the subthreshold current. The current independence on the isolation device length is clearly established. A large range of ideal field oxide geometries is systematically characterized to demonstrate the effect of two key parameters: the amount of buried oxide and the bird's-beak slope. The predicted isolation performances are verified on semirecessed and fully recessed structures by means of process/device simulations and experimental data. Good agreement is found between measured and calculated subthreshold currents.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
Source :
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