A study of the electrical performances of isolation structures

Dubois, Emmanuel; Coppee, J.-L.; Baccus, B.; Collard, D.

Type de document :

Article dans une revue scientifique: Article original

DOI :

10.1109/16.106243

Titre :

A study of the electrical performances of isolation structures

Auteur(s) :

Dubois, Emmanuel [Auteur]

Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Coppee, J.-L. [Auteur]
Université Catholique de Louvain = Catholic University of Louvain [UCL]
Baccus, B. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]
Collard, D. [Auteur]
Microélectronique Silicium - IEMN [MICROELEC SI - IEMN]

Titre de la revue :

IEEE Transactions on Electron Devices

Pagination :

1477-1486

Éditeur :

Institute of Electrical and Electronics Engineers

Date de publication :

1990

ISSN :

0018-9383

Discipline(s) HAL :

Sciences de l'ingénieur [physics]/Electronique

Résumé en anglais : [en]

The electrical properties of field oxide isolation structures are investigated from the device physics point of view. The importance of the potential barrier formation mechanism is clearly demonstrated through the derivation ...
Lire la suite >The electrical properties of field oxide isolation structures are investigated from the device physics point of view. The importance of the potential barrier formation mechanism is clearly demonstrated through the derivation of an analytical formulation of the subthreshold current. The current independence on the isolation device length is clearly established. A large range of ideal field oxide geometries is systematically characterized to demonstrate the effect of two key parameters: the amount of buried oxide and the bird's-beak slope. The predicted isolation performances are verified on semirecessed and fully recessed structures by means of process/device simulations and experimental data. Good agreement is found between measured and calculated subthreshold currents.Lire moins >

Langue :

Anglais

Comité de lecture :

Oui

Audience :

Internationale

Vulgarisation :

Non

Collections :

Institut d'Électronique, de Microélectronique et de Nanotechnologie (IEMN) - UMR 8520

Source :

Harvested from HAL

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