Time-resolved self-heating temperature ...
Document type :
Compte-rendu et recension critique d'ouvrage
Permalink :
Title :
Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers
Author(s) :
Strenaer, R. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Guhel, Y. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Gaquiere, C. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Boudart, B. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Equipe Electronique - Laboratoire GREYC - UMR6072
Guhel, Y. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Gaquiere, C. [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Puissance - IEMN [PUISSANCE - IEMN]
Boudart, B. [Auteur]
Equipe Electronique - Laboratoire GREYC - UMR6072
Journal title :
Microelectronics Reliability
Pages :
115156
Publisher :
Elsevier
Publication date :
2023-11
ISSN :
0026-2714
English keyword(s) :
GaN-based devices
Thermal characterization
Transient self-heating temperature
Raman spectroscopy
micro-Raman thermometers
Thermal characterization
Transient self-heating temperature
Raman spectroscopy
micro-Raman thermometers
HAL domain(s) :
Physique [physics]
Sciences de l'ingénieur [physics]
Sciences de l'ingénieur [physics]
English abstract : [en]
The DC and RF electrical performance and reliability of GaN-based transistors depend on their thermal behavior. Therefore, measuring the self-heating temperature of these devices under real operating conditions with high ...
Show more >The DC and RF electrical performance and reliability of GaN-based transistors depend on their thermal behavior. Therefore, measuring the self-heating temperature of these devices under real operating conditions with high accuracy is an important and challenging issue. For these reasons, we present a time-resolved thermometry technique to measure transient self-heating temperatures in semiconductor components by combining conventional Raman spectroscopy and CeO2 Raman micro-thermometers. Thus, the experimental GaN volumetric and surface self-heating temperatures measured for biased AlInN/GaN HEMTs in both DC and pulsed regime are reported with a submicrometer spatial resolution and a temperature resolution of about 5 °C. Likewise time-resolved self-heating temperature of drain contact surface has also been studied.Show less >
Show more >The DC and RF electrical performance and reliability of GaN-based transistors depend on their thermal behavior. Therefore, measuring the self-heating temperature of these devices under real operating conditions with high accuracy is an important and challenging issue. For these reasons, we present a time-resolved thermometry technique to measure transient self-heating temperatures in semiconductor components by combining conventional Raman spectroscopy and CeO2 Raman micro-thermometers. Thus, the experimental GaN volumetric and surface self-heating temperatures measured for biased AlInN/GaN HEMTs in both DC and pulsed regime are reported with a submicrometer spatial resolution and a temperature resolution of about 5 °C. Likewise time-resolved self-heating temperature of drain contact surface has also been studied.Show less >
Language :
Anglais
Popular science :
Non
Source :
Submission date :
2023-12-06T04:33:20Z