High Mobility InAs/GaSb Quantum Well and ...
Document type :
Communication dans un congrès avec actes
Title :
High Mobility InAs/GaSb Quantum Well and in-Plane Core-Shell Nanostructures Grown on Highly Mismatched Substrates
Author(s) :
Khelifi, Wijden [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Coinon, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Berthe, Maxime [Auteur]
Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Troadec, David [Auteur]
Patriarche, Gilles [Auteur]
Grandidier, Bruno [Auteur]
Desplanque, Ludovic [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Coinon, Christophe [Auteur]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Centrale de Micro Nano Fabrication - IEMN [CMNF - IEMN]
Berthe, Maxime [Auteur]

Plateforme de Caractérisation Multi-Physiques - IEMN [PCMP - IEMN]
Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
Troadec, David [Auteur]

Patriarche, Gilles [Auteur]
Grandidier, Bruno [Auteur]

Desplanque, Ludovic [Auteur]

Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 [IEMN]
EPItaxie et PHYsique des hétérostructures - IEMN [EPIPHY - IEMN]
Conference title :
ICMBE
City :
Scheffield
Country :
Royaume-Uni
Start date of the conference :
2022-09-05
English keyword(s) :
InAs
molecular beam epitaxy
selective area epitaxy
four probes STM
molecular beam epitaxy
selective area epitaxy
four probes STM
HAL domain(s) :
Physique [physics]
English abstract : [en]
We present the growth of InAs based heterostructures by molecular beam epitaxy on highly mismatched GaAs and InP substrates. We particularly investigate the protection of the InAs channel both with respect to the interface ...
Show more >We present the growth of InAs based heterostructures by molecular beam epitaxy on highly mismatched GaAs and InP substrates. We particularly investigate the protection of the InAs channel both with respect to the interface dislocation network arising at the mismatched interface using a GaSb accommodation layer and with respect to the surface defects with a GaSb shell. Hall effect and 4-probe scanning tunnelling microscopy are correlated to evidence the impact of these passivating layers on the electron transport properties inside in-plane InAs nanowires.Show less >
Show more >We present the growth of InAs based heterostructures by molecular beam epitaxy on highly mismatched GaAs and InP substrates. We particularly investigate the protection of the InAs channel both with respect to the interface dislocation network arising at the mismatched interface using a GaSb accommodation layer and with respect to the surface defects with a GaSb shell. Hall effect and 4-probe scanning tunnelling microscopy are correlated to evidence the impact of these passivating layers on the electron transport properties inside in-plane InAs nanowires.Show less >
Language :
Anglais
Peer reviewed article :
Oui
Audience :
Internationale
Popular science :
Non
ANR Project :
Source :